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Heang Seuk Lee,김창영,우종관,최치규,R. Navamathavan,이광만 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.5
The interconnection of copper (Cu) with low-dielectric-constant interlayer films (low-k) is crucial to improving integrated circuit performance. Integration challenges with new ultra-low-k generation materials include electrical-property and reliability issues. In this study, low-dielectric-constant SiOC(-H) films were deposited on p-type Si(100) substrates by using plasma-enhanced chemical vapor deposition (PECVD) with dimethyldimethoxysilane (DMDMOS) and oxygen gas as precursors. The deposited SiOC(-H) films were then annealed at temperatures from 250 to 450 ℃ in a vacuum. The electrical conduction in the low-dielectric-constant SiOC(-H) films depended on two main conduction mechanisms: Schottky emission (SE) and Poole-Frenkel (PF) emission. We calculated the Schottky barrier height at the interface between the Cu and the SiOC(-H) film for SE conduction and the trap potential well in the SiOC(-H) films for PF conduction. These calculations showed that the leakage current densities were linearly related to the square root of the applied electric field.
Heang Seuk Lee,김창영,R. Navamathavan,Jong-Kwan Woo,Younghun Yu,이광만,최치규 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
We report changes in the morphology and the composition at the interfacial regions of lowdielectric- constant SiOC(-H) films deposited on p-Si(100) substrates by using the plasma-enhanced chemical vapor deposition (PECVD) method. The investigated samples had Cu/SiOC(-H)/p- Si(100) and Cu/TaN/SiOC(-H)/p-Si(100) metal-insulator-semiconductor (MIS) structures. The structural and the compositional characteristics of these structures were analyzed by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Upon thermal annealing at 450℃ for films prepared with different radio-frequency (rf) powers, X-ray diffraction patterns revealed strong intermixing at the two interfaces of Cu/SiOC(-H)/p-Si(100) and Cu/TaN/SiOC(- H)/p-Si(100), but no sign of diffusion was observed at lower annealing temperatures. The results are discussed in terms of the roles played by Cu inter diffusion and oxidation at the SiOC(-H)/p- Si(100) interface region. The dielectric constants were measured for these as-deposited and 200 ℃-annealed MIS structures. We report changes in the morphology and the composition at the interfacial regions of lowdielectric- constant SiOC(-H) films deposited on p-Si(100) substrates by using the plasma-enhanced chemical vapor deposition (PECVD) method. The investigated samples had Cu/SiOC(-H)/p- Si(100) and Cu/TaN/SiOC(-H)/p-Si(100) metal-insulator-semiconductor (MIS) structures. The structural and the compositional characteristics of these structures were analyzed by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Upon thermal annealing at 450℃ for films prepared with different radio-frequency (rf) powers, X-ray diffraction patterns revealed strong intermixing at the two interfaces of Cu/SiOC(-H)/p-Si(100) and Cu/TaN/SiOC(- H)/p-Si(100), but no sign of diffusion was observed at lower annealing temperatures. The results are discussed in terms of the roles played by Cu inter diffusion and oxidation at the SiOC(-H)/p- Si(100) interface region. The dielectric constants were measured for these as-deposited and 200 ℃-annealed MIS structures.
샤르마,김보균,Heang-Seuk Lee,최치규,INAMDARAKBAR IBRAHIM,임현식 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
Nanocrystalline and nanocolumnar aluminum thin films were deposited on glass and Ti/glass substrates at normal and oblique angles of incidence in vacuum (1.0 × 10−6 Torr) by using an electron-beam evaporator. The average grain size of the Al thin films produced at a normal angle of incidence increased from 25 nm to 50 nm when the substrate was changed from glass to Ti/glass. The average aspect ratio of the aluminum nanocolumns (Al nanorods) grown on the glass substrate increased from 1.65 to 3.65 as the deposition angle increased from 65° to 85° while the aspect ratio of Al nanorods grown on Ti/glass substrates increased from 1.80 to 4.00 as the deposition angle increased from 65° to 85°. The X-ray diffraction pattern showed a broad baseline in nanocrystalline and nanocolumnar thin films. In the case of Al thin films on glass, the full width at half maximum (FWHM) was observed to be 14.34 for all depositions while in the case of Al thin films on Ti/glass, the FWHM was decreased from 17.66 to 14.02 as the deposition angle increased from 0° to 85°. The X-ray photoelectron spectroscopy analysis confirmed that the peak for Al nanorods was observed at a binding energy of 74.44 eV.
A Study of the Properties of the Cu/SiOC(-H)/p-Si(100)and Cu/TaN/SiOC(-H)/p-Si(100) Interface
김창영,R. Navamathavan,Heang Seuk Lee,유영훈,우종관,최치규 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
Metal-insulator-semiconductor (MIS) structures based on low-dielectric-constant SiOC(-H) films with Cu (electrode) and TaN (barrier) layers are compared to study the effect of the electrode materials on the properties of the dielectric/semiconductor interface. The detailed experimental results for the C-V, G/! -V, and I-V characteristics were analyzed out in order to extract the electrical parameters, such as the interface state density, the fixed charge density, the flat band voltage, and the breakdown strength of the low- dielectric SiOC(-H) film with the stack of Cu/SiOC(-H)/p- Si(100)/Al and Cu/TaN/SiOC(-H)/p-Si(100)/Al structures. The capacitance and the conductance values were to three times higher for the 200 ˚C annealed Cu/SiOC(-H)/p-Si(100)/Al structure than they were for the as-deposited one whereas no significant change was observed with the Cu/TaN/SiOC(-H)/p-Si(100)/Al structure. The surface state density in the Cu/TaN/SiOC(-H)/p-Si(100)/Al structure was considerably lower than that in the Cu/SiOC(-H)/p-Si(100)/Al structure. Metal-insulator-semiconductor (MIS) structures based on low-dielectric-constant SiOC(-H) films with Cu (electrode) and TaN (barrier) layers are compared to study the effect of the electrode materials on the properties of the dielectric/semiconductor interface. The detailed experimental results for the C-V, G/! -V, and I-V characteristics were analyzed out in order to extract the electrical parameters, such as the interface state density, the fixed charge density, the flat band voltage, and the breakdown strength of the low- dielectric SiOC(-H) film with the stack of Cu/SiOC(-H)/p- Si(100)/Al and Cu/TaN/SiOC(-H)/p-Si(100)/Al structures. The capacitance and the conductance values were to three times higher for the 200 ˚C annealed Cu/SiOC(-H)/p-Si(100)/Al structure than they were for the as-deposited one whereas no significant change was observed with the Cu/TaN/SiOC(-H)/p-Si(100)/Al structure. The surface state density in the Cu/TaN/SiOC(-H)/p-Si(100)/Al structure was considerably lower than that in the Cu/SiOC(-H)/p-Si(100)/Al structure.