http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Arpatzanis, N.,Hastas, N. A.,Dimitriadis, C. A.,Konstantinidis, G.,Charitidis, C.,Song, J. D.,Choi, W. J.,Lee, J. I. WILEY-VCH Verlag 2009 Physica Status Solidi. B Vol.246 No.4
<P>The effect of rapid thermal annealing temperature on the trap properties of Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In<SUB>0.2</SUB>Ga<SUB>0.8</SUB>As wells have been investigated by capacitance–voltage (C –V) and low frequency noise (LFN) measurements in both reverse and forward bias regimes. The current noise spectra show 1/f behaviour and generation–recombination (g–r) noise, attributed to uniformly distributed traps in energy and to a discrete trap level in the energy band-gap of the GaAs capping layer, respectively. The experimental results show that the annealing temperature is closely related with the level of these noise sources. The apparent doping concentrations, calculated from the C –V characteristics, indicate that the density of trapping states near the buffer layer interface is increased as the annealing temperature increases. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
Arpatzanis, N.,Hastas, N. A.,Dimitriadis, C. A.,Charitidis, C.,Song, J. D.,Choi, W. J.,Lee, J. I. WILEY-VCH Verlag 2008 Physica status solidi. PSS. C, Current topics in s Vol.5 No.12
<P>The trap properties of Au/n-GaAs Schottky diodes with embedded InAs quantum dots (QDs) and different ideality factors were studied by capacitance-voltage (C-V) and low-frequency noise (LFN) measurements in the reverse bias regime. The reverse current noise spectra show 1/f behaviour and g-r noise, attributed to uniformly distributed traps in energy or to a discrete trap level in the energy band-gap of the GaAs capping layer, respectively. The Schottky contact performance or characteristics is closely related with the level of these noise sources. The C-V characteristics indicate the existence of traps with Gaussian energy distribution in the GaAs capping layer and in the InAs QDs layer. From analysis of the C-V characteristics, the density and the activation energy of these trap distributions are determined. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
Fadiyah Hasta Puspitasari,Nurdiansyah,Ummu Salamah,Nela Rahmati Sari,Akhiruddin Maddu,Achmad Solikhin 한국섬유공학회 2020 Fibers and polymers Vol.21 No.4
Water pollution has been an alarming concern for researchers due to its hazard to life, human health, andenvironment. Chitosan and lignocellulose materials have been harnessed for the purification of contaminated water. Theobjective of this study was to investigate the potential use of chitosan hydrogel filled with activated carbon nanoparticles(ACNPs) and non-activated carbon nanoparticles (n-ACNPs) for water purification. The results of this study revealed thatboth ACNPs and n-ACNPs were comprised by poly- and single crystals with an average nanofiber diameter of 22.27 nmwhereas n-ACNPs were aggregated with diameter size of above 100 nm and was dominated with amorphous region. Limitedvoids were observed in chitosan/ACNPs hydrogel but n-ACNPs added in chitosan hydrogel were aggregated to form voids. With the addition of ACNPs and n-ACNPs, there was not dramatic change in IR wavenumber. The addition of high ACNPsconcentration increased crystallinity index (CrI) of chitosan hydrogel but high addition of n-ACNPs concentration decreasedCrI’s chitosan hydrogel. After chitosan/ACNPs and chitosan/n-ACNPs hydrogel were submerged with heavy metals, IRspectra were altered, and the internal surfaces of these hydrogels became different. Both chitosan/ACNPs and chitosan/n-ACNPs hydrogel were able to absorb Fe and Zn effectively over heavy metals of Pb and Cu. Chitosan hydrogel was moreeffective to kill Escherichia coli than chitosan/ACNPs and chitosan/n-ACNPs hydrogel.