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Plasma-Confinement Physics Study in Compact Helical System
stoichi Okamura,A. Fujisawa,A. Shimizu,C. Takahashi,C. Suzuki,H. Iguchi,H. Nakano,H. Matsushita,K. Nagaoka,K. Matsuo,K. Ida,K. Toi,K. Nakamura,K. Matsuoka,M. Yoshinuma,M. Isobe,M. Takeuchi,R. Ikeda,S. 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
In a CHS experiment, various types of transport barrier have been studied. An internal transport barrier (ITB) for electrons in a stellarator was first found in CHS, and the ITB for improved ion confinement was also found. H-mode (edge transport barrier) study in CHS showed many common features in transition to tokamak experiments, although the magnetic surface quantities are very different. Discharges with a combination of ETB and ITB were also found. Two heavy ion beam diagnostics in CHS showed a new direct measurement of zonal flow structure in toroidal confinement. The relation between the fluctuation and the transport barrier was also studied.
Preparation of IrO2 Thin Films by MOCVD Using Ir(EtCp)(CHD)
H. Fujisawa,S. Watari,H. Niu,M. Shimizu,N. Oshima 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
We report on MOCVD of IrO2 thin lms by using liquid Ir precursor, Ir(EtCp)(CHD). IrO2 lms were successfully grown on SiO2/Si, Ti/SiO2/Si and Pb(Zr,Ti)O3/Pt/SiO2/Si at 400C and oxygen concentration of as high as 77 %. IrO2 lms prepared on SiO2/Si with and without surfaceoxidizedIr seeds exhibited an electrical resistivity of 103 cm, and a root-mean-square surface roughness of 5 nm. IrO2 lms showed step coverages of 40-50%on SiO2-stepped substrate with L/S (line and space) of 0.7/3.6 and 1.4/2.9 m.
H. Yoda,Y. Ohsawa,Y. Kato,N. Shimomura,M. Shimizu,K. Koi,S. Shirotori,T. Inokuchi,H. Sugiyama,S. Oikawa,B. Altansargai,M. Ishikawa,A. Kurobe 한국자기학회 2019 Journal of Magnetics Vol.24 No.1
We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (Icsw) smaller than 50 μA at 20 nsec. for designed MTJ size of about 50 × 150 ㎚². The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of Icsw further reduction of Icsw is estimated to clarify that VoCSM has a potential to reduce Icsw down to several μA.
PbTiO_3 thin films grown on Pt-covered vicinal SrTiO_3(001) substrates
H. Fujisawa,H. Yane,Y. Hiki,S. Nakashima,M. Shimizu 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.31
We investigated the growth behavior and domain structure of PbTiO_3 thin films on Pt-covered SrTiO_3 (100) (STO) substrates by metalorganic chemical vapor deposition. The step height and terrace width of single-crystalline Pt films on 1 - 4˚ vicinal STOs along [100] and [110] were 1 - 6 and 80 - 150 nm, respectively. PbTiO_3 films were grown in the Volmer-Weber mode on Pt-covered vicinal STOs, and nanosized islands were formed at the early growth stage. Atomic force microscopy revealed that nucleation of PbTiO_3 predominantly occurred at ascending steps on the Pt surface, and that the lateral growth of PbTiO_3 islands was limited by the steps. X-ray diffraction analysis and piezoresponse force microscopy indicated that a-domain and misfit dislocations were anisotropically introduced in PbTiO_3 thin films on Pt/4˚-vicinal STO along [100]. On [110]-vicinal STOs, no significant influence of the vicinal substrate on the growth behavior or domain structure of PbTiO_3 was observed.
h Ninomiya,T. Imai,T. Fujii,T. Suzuki,T. Fujita,T. Yamamoto,Y. Uesugi,Y. Kamada,Y. Takase,Y. Kudo,Y. Miura,Y. Ikeda,Y. M. Miura,A. Shimizu,A. Kimura,A. Morioka,A. Nishimura,A. Sagara,G. Kurita,H. Kubo 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
The NCT Program, in which the present JT-60U is being modified into a superconducting coil machine, is discussed under nationwide collaboration in Japan. Its mission is to establish high-beta steady-state operation for DEMO and to contribute to ITER. NCT is designed to have potential to investigate such research.
H. Fujisawa,H. Niu,M. Shimizu,M. Sugata 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
We demonstrated deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS) measurements for metal/insulator/semiconductor (MIS) and metal/ferroelectric/insulator/semiconductor (MFIS) structures using insulating TiO2, ZrO2 and ferroelectric Pb(Zr,Ti)O3 (PZT) layers grown by metalorganic chemical vapor deposition (MOCVD). Interface trap densities of MIS diodes with ZrO2 and TiO2 layers measured by the DLTS method were 1:5 3:9 1011 and 5:2 5:5 1011 eV..1cm..2, respectively. By the ICTS method, interface trap densities were successfully measured as 5:4 1011 and 1:5 1012 eV..1cm..2 for Au/PZT/ZrO2/Si diodes with and without plasma nitridation of Si surface.
Crystal Dependence in Micro Scratching of Carbon Steel
H. TANIYAMA,H. EDA,J. SATO,J. SHIMIZU,L. ZHOU 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
In order to produce micromachined parts with a great dimensional accuracy, it is important to clarify the influence of heterogeneity and/or discontinuity of workpiece materials on the micromachining process, because almost all structural materials are composed of heterogeneous and/or homogeneous crystal grains at the micro scale. Experiments where JIS S25C steel had been scratched with a diamond triangular pyramid indenter were conducted under a field emission scanning electron microscope (FE-SEM). The difference of plastic deformation at a groove scratched between a pearlite zone and a proeutectoid ferrite zone was investigated through comparison with the groove scratched of a pearlite zone and a proeutectoid ferrite zone.
M. Shimizu,Y. Ohsawa,H. Yoda,S. Shirotori,B. Altansargai,N. Shimomura,Y. Kato,S. Oikawa,H. Sugiyama,T. Inokuchi,K. Koi,M. Ishikawa,K. Ikegami,A. Kurobe Korean Magnetics Society 2018 Journal of Magnetics Vol.23 No.4
A voltage-control spintronics memory (VoCSM) which has a potential of low energy consumption uses the spin-Hall effect (SHE) and the voltage-controlled magnetic anisotropy (VCMA) effect for its write operation. In this work, the relationship between the critical switching current (Icsw) and the SHE electrode thickness (tN) is investigated in the range of 5 nm < tN < 8 nm. In the fabrication process, we develop highly-selective patterning process to stop MTJ etching precisely on the surface of the SHE electrode. Using the technique, Icsw is reduced by half as tN is varied from 8 nm to 5 nm, and Icsw of 112 mA at 20 ns write current pulse is obtained for MTJ size of 50 × 150 nm2 on Ta(2 nm)/TaB (3 nm) electrode. The results indicate that the decrease in the SHE electrode thickness is a promised method to reduce Icsw, which leads VoCSM to a low-energy-consumption device.