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H. Mahmoudi Chenari,M.M. Golzan,H. Sedghi,A. Hassanzadeh,M. Talebian 한국물리학회 2011 Current Applied Physics Vol.11 No.4
The dielectric properties of Cu/nano-SnO_2 thick film/Cu arrangement were studied by means of complex impedance spectroscopy and frequency dependence of capacitance measured from the impedance data at a range of frequency intervals between 1 Hz and 1 MHz with a voltage between 0 and 2 V. The frequency dependence of the dielectric constant ε´, dielectric loss ε″, loss tangent (tan δ), electric modulus M´ and M″ and AC electrical conductivity (σ_ac) of the sandwich arrangement was subsequently investigated. Experimental results revealed that the aforementioned parameters have strong frequency dependence. The obtained values of ε´, ε″ showed increments with decreasing frequency. However,increasing frequency levels cause an increase in the AC electrical conductivity (σ), real and imaginary part of electric modulus. In addition to this, in order to gain an insight into the electric nature of Cu/nano-SnO_2 thick film/Cu arrangement device, the Cole―Cole diagrams of the electric modulus were investigated at different voltages.
H. Mahmoudi Chenari,Ali Hassanzadeh,M.M. Golzan,H. Sedghi,M. Talebian 한국물리학회 2011 Current Applied Physics Vol.11 No.3
In this work, the electric and dielectric properties of nanocrystalline SnO_2 thick films were studied using ac impedance spectroscopy under different conditions through capacitanceefrequency measurements in frequency range from 1 Hz to 1 MHz and bias voltage range from 0 V to 2 V. Results showed that dielectric constant (ε´), dielectric loss (ε″), loss tangent (tan δ), ac electrical conductivity (σ) and the electric modulus (M) are strongly frequency dependent. A decrease in frequency accompanied with an increase in ε´ and ε″ values. Whereas, ac electrical conductivity (σ), real (M^Ⅰ) and imaginary parts of electric modulus (M^Ⅱ) values are increased with frequency increasing. A comparative study showed that our prepared thick films have greater dielectric value than that of the reported data; hence can be used them as ultrahigh dielectric materials.