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Graphene Field Effect Transistors
구나세카란 베누코팔(Gunasekaran Venugopal),김상재(Sang Jae Kim) 대한기계학회 2010 대한기계학회 춘추학술대회 Vol.2010 No.11
In this paper, we present a simple technique for fabrication of graphene field effect transistor (FET) devices using photolithography and their electric transport characteristics. Our graphene devices show a clear metallic characteristic with device resistance of 11 ㏀ at room temperature. The linear I<SUB>DS</SUB> and V<SUB>DS</SUB> behavior indicated a good ohmic contact between Au contact pads and graphene channel. The I<SUB>DS</SUB> and V<SUB>GS</SUB> curve shows an ambipolar characteristics, both electron and hole conductions. The gate can cause either hole or electron conduction with the Dirac point, V<SUB>D</SUB>, (charge neutrality point) at V<SUB>GS</SUB> ~ 11.4 V. It can be seen from the right shift of the Dirac point that the device has been strongly p-doped.