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Cho, Moonju,Degraeve, Robin,Pourtois, Geoffrey,Delabie, Annelies,Ragnarsson, Lars-ke,Kauerauf, Thomas,Groeseneken, Guido,De Gendt, Stefan,Heyns, Marc,Hwang, Cheol Seong IEEE 2007 IEEE transactions on electron devices Vol.54 No.4
<P>Atomic layer deposition (ALD) with HfCl<SUB>4</SUB> as a precursor is widely used for HfO<SUB>2</SUB> fabrication. Due to the nature of the precursor under study, i.e., HfCl<SUB>4</SUB> and H<SUB>2</SUB>O, the presence of chlorine residues in the film due to insufficient hydrolysis is eminent. Obviously, the chlorine residue in the HfO<SUB>2</SUB> film is suspected to affect the quality of the HfO<SUB>2</SUB> film. In this paper, The authors reduced the concentration of chlorine residues by increasing the H<SUB>2</SUB>O oxidant pulse time in between the deposition cycles from 0.3 to 10 and 90 s. Time-of-flight secondary ion mass spectrometry analysis shows that this decreases the chlorine concentration in the HfO<SUB>2</SUB> film by more than one order of magnitude. However, time-dependent dielectric breakdown analysis shows that the lifetime remains quasi unaffected (within identical error bars) for the different injection cycles. Charge pumping analysis was done by varying both pulse frequency and amplitude to investigate the creation of defects, but negligible differences were observed. Therefore, the presence of chlorine residues has no significant impact on the trap generation and reliability of ALD HfO<SUB>2</SUB> layers, and this result corresponded with the mobility result. The experimental picture is confirmed with first-principle calculations that show that the presence of chlorine residues does not induce defect levels in the bandgap of HfO<SUB>2</SUB></P>
Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs
Jin Ju Kim,Moonju Cho,Pantisano, L.,Ukjin Jung,Young Gon Lee,Chiarella, T.,Togo, M.,Horiguchi, N.,Groeseneken, G.,Byoung Hun Lee IEEE 2012 IEEE electron device letters Vol.33 No.7
<P>A study of the negative and positive bias temperature instability (N/PBTI) reliability of FinFETs with different TiN metal gates deposited by either atomic layer deposition (ALD) or physical vapor deposition (PVD) on HfO<SUB>2</SUB> dielectrics found that the nonuniformity of the interfacial oxide layer is closely related to reliability characteristics. FinFETs with an ALD TiN gate exhibit better NBTI and PBTI lifetimes than those with a PVD TiN gate. In addition, the dependence of fin width on NBTI reliability appeared to be worse with narrower fins, whereas PBTI reliability improves.</P>
Analysis of frequency dispersion in amorphous In—Ga—Zn—O thin-film transistors
Ajay Bhoolokam,Manoj Nag,Adrian Chasin,Soeren Steudel,Jan Genoe,Gerwin Gelinck,Guido Groeseneken,Paul Heremans 한국정보디스플레이학회 2015 Journal of information display Vol.16 No.1
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain this. Multi-frequency analysis techniques for trap density distribution use a lumped series resistance model and attribute dispersion solely to the charging and discharging of trap states. As the resistance–capacitance (RC) time constant values of the IGZO TFTs are in the range of 10–100 μs, a distributed RC network is better suited for the measured frequency range (1 kHz–1 MHz).
Manoj Nag,Robert Muller,Soeren Steudel,Steve Smout,Ajay Bhoolokam,Kris Myny,Sarah Schols,Jan Genoe,Brian Cobb,Abhishek Kumar,Gerwin Gelinck,Yusuke Fukui,Guido Groeseneken,Paul Heremans 한국정보디스플레이학회 2015 Journal of information display Vol.16 No.2
We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 k/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108.