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1
Comparative Study of MOSFET and IGBT for High Repetitive Pulsed Power Modulators

Sung-Roc Jang,Hong-Je Ryoo,Goussev, G.,Geun Hie Rim IEEE 2012 IEEE transactions on plasma science Vol.40 No.10
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<P>This paper presents an investigation of semiconductor switches for high voltage solid-state pulsed power modulators from the viewpoint of pulse rising time, efficiency, and reliability. A comparative study of insulated gate bipolar transistor (IGBT) and metal oxide semiconductor field effect transistor (MOSFET) devices is provided, focusing particularly on the characteristics of each device for pulsed power applications. Two kinds of stacks for 10-kV pulses are developed with a high voltage capacitor charger in order to experimentally compare the characteristics of each device. Although the structure of each stack is similar, the number of power cells for the 10-kV pulse is different due to the device voltage rating. The power cell voltage for IGBT and MOSFET-based stacks is about 840 V and 560 V, respectively. Therefore, two types of transformer, with six secondary windings for the IGBT stack and nine secondary windings for the MOSFET stack, are also designed for storage capacitor charging. Moreover, the ease of varying the pulse repetition rate and the pulse width shows the advantages of the developed modulators in facilitating the measurement of device characteristics in different pulse output conditions. The experiments are performed with noninductive resistor loads, and the results of the comparison tests are discussed. In addition, the results prove that the developed modulator can be effectively used for high repetitive pulsed power applications.</P>
2
Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Seung-Bok Ok,Hong-Je Ryoo,Sung-Roc Jang,Suk-Ho Ahn,Goussev, G. IEEE 2012 IEEE transactions on plasma science Vol.40 No.10
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<P>This paper deals with the detailed design of a pulsed power modulator using insulated gate bipolar transistor (IGBT) switches for industrial applications. Output specifications of the proposed modulator are as follows: variable output pulse voltage 1~40 kV; pulse width 0.5~5 μs ; maximum pulse repetition rates 3 kHz, and average output power of 13 kW. The proposed pulsed power modulator consists of a high-voltage capacitor charger based on a high-efficiency resonant inverter and pulse generator part including a series of connected 24 pieces power cells. To verify the proposed design, PSpice modeling was performed. Finally, experimental results proved the reliability and robustness of the proposed solid-state pulsed power modulator.</P>
3
IGBT 직렬구동에 의한 60KV 펄스 전원장치 개발

柳泓齊(Hong-Je Ryoo),金鍾洙(Jong-Soo Kim),林根熙(Geun-Hie Rim),G. I. Goussev,D. Sytykh 대한전기학회 2007 전기학회논문지 Vol.56 No.1
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  ScienceON
  
  DBpia
In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60㎸ pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60㎸ output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.