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박범영,김호윤,김구연,정해도,Park, Boumyoung,Kim, Hoyoun,Kim, Gooyoun,Jeong, Haedo 한국기계가공학회 2003 한국기계가공학회지 Vol.2 No.4
Chemical mechanical polishing(CMP) has been applied for planarization of topography after patterning process in semiconductor fabrication process. Tungsten CMP is necessary to build up interconnects of semiconductor device. But the tungsten dishing and the oxide erosion defects appear at end-point during tungsten CMP. It has been known that the generation of dishing and erosion is based on the over-polishing time, which is determined by pattern selectivity. Fixed abrasive pad takes advantage of decreasing the defects resulting flam reducing pattern selectivity because of the lower abrasive concentration. The manufacturing technique of fixed abrasive pad using hydrophilic polymers is introduced in this paper. For application to tungsten CMP, chemicals composed of oxidizer, catalyst, and acid were developed. In comparison of the general pad and slurry for tungsten CMP, the fixed abrasive pad and the chemicals resulted in appropriate performance in point of removal rate, uniformity, material selectivity and roughness.
박범영,이현섭,김형재,서헌덕,김구연,정해도,Park, Boumyoung,Lee, Hyunseop,Kim, Hyoungjae,Seo, Heondeok,Kim, Gooyoun,Jeong, Haedo 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.10
Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.