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A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors
IEEE 2018 IEEE electron device letters Vol.39 No.9
<P>Junctionless transistors (JLTs) without PN-junctions near the source/drain are promising candidates for further development of CMOS technology. The Si thickness of tri-gate JLTs is crucial to understand their unique electrical properties related to bulk neutral and surface accumulation conduction. A simple method based on a unique operation mechanism is suggested for extraction of <TEX>$\text{t}_{\mathrm {si}}$</TEX> from measurements on tri-gate JLTs. The method was successfully applied to fabricated tri-gate JLTs and the extracted <TEX>$\text{t}_{\mathrm {si}}$</TEX> values were comparable with those of transmission electron microscopy. Furthermore, the validity of the method was confirmed by 2-D numerical simulation.</P>
Impact of trap localization on low-frequency noise in nanoscale device
Lee, Jae Woo,Yun, Wan Soo,Ghibaudo, Gé,rard American Institute of Physics 2014 JOURNAL OF APPLIED PHYSICS - Vol.115 No.19
The impact of oxide trap localization concerning low-frequency noise has been investigated for nanoscale field effect transistors. Various low-frequency noise behaviors induced by uniformly/non-uniformly distributed gate oxide traps have been estimated using Monte-Carlo simulation and compared to experimental data. The noise level and variability are affected by the trap concentration and the channel area for uniformly distributed traps. Localized oxide traps induce different corner frequencies and noise variability according to the mean location and the standard deviation of traps. (C) 2014 AIP Publishing LLC.
Comparison for 1/ <tex> ${f}$</tex> Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET
Vodapally, Sindhuri,Theodorou, Christoforos G.,Bae, Youngho,Ghibaudo, Gerard,Cristoloveanu, Sorin,Im, Ki-Sik,Lee, Jung-Hee IEEE 2017 IEEE transactions on electron devices Vol.64 No.9
<P>DC and 1/f noise performances of the AlGaN/GaN fin-shaped field-effect transistor (FinFET) with fin width of 50 nm were analyzed. The FinFET exhibited approximately six times larger normalized drain current and transconductance, compared to those of the AlGaN/GaN planar metal-insulator-semiconductor heterostructure field-effect-transistor (MISHFET) fabricated on the same wafer. It was also observed that the FinFET exhibited improved noise performance with lower noise magnitude of 8.5x10(-15) A(2)/Hz when compared to the value of 8.7x10(-14)A(2)/Hz for the planar MISHFET. An intensive analysis indicated that both devices follow the carrier number fluctuation model, but the FinFET suffers much less charge trapping effect compared to the MISHFET (two orders lower charge trapping was observed). Moreover, the FinFET did not exhibit the Lorentz-like components, which explains that the depleted fin structure effectively prevents the carriers from being trapped into the underlying thick GaN buffer layer. On the other hand, the slope of the noise is 2 irrespective of drain voltage and apparently showed the Lorentz-like components, especially at high drain voltage in MISHFET device. This explains that the carrier trapping/detrapping between the 2-D electron gas channel and the GaN buffer layer is significant in MISHFET.</P>
Reliable Mobility Evaluation of Organic Field-Effect Transistors With Different Contact Metals
Huang, Fanming,Liu, Ao,Zhu, Huihui,Xu, Yong,Balestra, Francis,Ghibaudo, Gerard,Noh, Yong-Young,Chu, Junhao,Li, Wenwu IEEE 2019 IEEE electron device letters Vol.40 No.4
<P>The reliability of mobility evaluation of organic field-effect transistors (OFETs) is a serious issue because numerous overestimated and underestimated mobilities have been reported recently. A reliable approach to accurately evaluate the OFET mobility is therefore highly desirable. Here, in this letter, two commonly employed methods and the Y function method (YFM) were used to extract the mobilities of indacenodithiophene-co-benzothiadiazole (IDT-BT) OFETs with four different contact metals. The mobilities extracted by the commonly used methods varied greatly with the contact metal and channel length, whereas those extracted by the YFM were very stable and approached the intrinsic mobility of IDT-BT. Our results show that YFM is a precise approach that can be widely used to evaluate the OFET mobility.</P>
Metal evaporation dependent charge injection in organic transistors
Xu, Y.,Liu, C.,Sun, H.,Balestra, F.,Ghibaudo, G.,Scheideler, W.,Noh, Y.Y. Elsevier Science 2014 ORGANIC ELECTRONICS Vol.15 No.8
To illuminate a long-term remaining issue on how contact metallization (metal and speed) affects charge injection, we investigated top-contact pentacene transistors using two categories of metals deposited at various rates. Differing from previous studies such as those devoted to morphological influences by microscopy, in this work we concentrated on their electrical characteristics in particular combining the low-frequency noise which provided a direct quantity of trap density and its evolution with respect to contact metal and deposition rate. It turns out that the transistors with noble metal (Au) suffer from metal-diffusion related charge trapping in the pentacene bulk close to the Au/pentacene interface, and this diffusion-limited injection is greatly tuned from bulk to interface by speeding Au deposition which leads to a Schottky-like injection due to the severe thermal damage to the upper pentacene layer. Applying a conventional contacting metal (Cu), however, Ohmic contacts with much fewer traps are always observed regardless of metallization speed. This is attributed to an ultra-thin interlayer of Cu<SUB>x</SUB>O that guarantees stable Ohmic injection by introducing gap states and protecting the pentacene film so that those transistors appear to be free from Cu metallization. Our results quantitatively show the limiting factors of charge injection for different metals and at various evaporation rates.
Piao, Mingxing,Joo, Min-Kyu,Na, Junhong,Kim, Yun-Jeong,Mouis, Mireille,Ghibaudo, Gé,rard,Roth, Siegmar,Kim, Wung-Yeon,Jang, Ho-Kyun,Kennedy, Gary P.,Dettlaff-Weglikowska, Urszula,Kim, Gyu-Tae American Chemical Society 2014 The Journal of Physical Chemistry Part C Vol.118 No.46
<P>The thermoelectric power (TEP) of single walled carbon nanotube (SWCNT) thin films in pure metallic SWCNT (m-SWCNT) and pure semiconducting SWCNT (s-SWCNT) networks as well as in m- and s-SWCNT mixtures is investigated. The TEP measured on the pure s-SWCNT film (≈88 μV/K) was found to be almost 7 times higher than that of the m-SWCNTs (≈13 μV/K). Moreover, a quasilinear increase of TEP of the mixed SWCNT networks was observed as the fraction of s-SWCNTs is increased. The experimentally determined relationship between TEP and the fraction of s-SWCNTs in the mixture allows fast and simple quantitative analysis of the s:m ratio in any as-prepared heterogeneous SWCNT network. Furthermore, a semiempirical model analyzing the effect of the intertube junctions is proposed and applied to describe the thermoelectric behavior of the prepared SWCNT networks. The results of calculations match well with the experimental data and clearly demonstrate that the measured TEP of thin SWCNT films is principally controlled by the intertube junctions. The fundamental role of junctions in generating thermoelectric power is not limited to only SWCNT networks as discovered here, but also could be applied to systems where nanoparticles/nanotube form percolating paths in thin films and composite materials.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2014/jpccck.2014.118.issue-46/jp505682f/production/images/medium/jp-2014-05682f_0010.gif'></P>
Behavior of subthreshold conduction in junctionless transistors
Park, S.J.,Jeon, D.Y.,Montes, L.,Mouis, M.,Barraud, S.,Kim, G.T.,Ghibaudo, G. Pergamon Press ; Elsevier Science Ltd 2016 Solid-state electronics Vol.124 No.-
In this work, the effect of high channel doping concentration and unique structure of junctionless transistors (JLTs) is investigated in the subthreshold conduction regime. Both experimental results and simulation work show that JLTs have reduced portion of the diffusion conduction and lower effective barrier height between source/drain and the silicon channel in subthreshold regime, compared to conventional inversion-mode (IM) transistors. Finally, it leads to a relatively large DIBL value in JLTs, owing to degraded gate controllability on channel region and strong drain bias effect. However, JLTs showed a better immunity against short channel effect in terms of degradation of the effective barrier height value.