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      • KCI등재후보

        High-density assembly of nanocrystalline silicon quantum dots

        A. Tanaka,G. Yamahata,Y. Tsuchiya,K. Usami,H. Mizuta,S. Oda 한국물리학회 2006 Current Applied Physics Vol.6 No.3

        This paper reports on a new bottomup technique of forming silicon nanostructures based on assembly of nanocrystalline (nc) Si dotsfrom the solution. The nc-Si dots with a diameter of 8 ± 1 nm were fabricated by using VHF plasma decomposition of pulsed SiH4 gassupply and deposited on the substrate randomly. We rst studied the method of making the nc-Si dot dispersion solution by immersingthe deposited wafer into various kinds of solvent with ultra sonic treatment. We found that methanol works as a suitable solvent for nc-Sidots. We then add a drop of the nc-Si dot solution onto other substrates and evaporated it. During the evaporation the nc-Si dots wereassembled in the solution via the lateral capillary meniscus force which works as an attractive force between the dots. Use of SiO2 sub-strate with good surface wettability with the solution was found vital to have the maximum meniscus force and to have two-dimensionalassembly of the dots. The evaporation speed was carefully controlled via temperature and evaporation pressure to achieve high dot den-scale patterning and succeeded in making the nc-Si dots cluster bridging between the nanoelectrodes with a gap of as small as 20 nm.

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