http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
K. Ramachandran,D. Kalpana,Y. Sathishkumar,이양수,K. Ravichandran,G. Gnana Kumar 한국공업화학회 2016 Journal of Industrial and Engineering Chemistry Vol.35 No.-
A facile, one-pot and environmental benign method exploiting Piper betle biomass as a reducing andstabilizing agent was proposed for the preparation of silver (Ag) nanoparticles. The Ag nanoparticlesprepared from dried Piper betle leaves extract exhibited unique spherical configuration and facecentered-cubic structure with preferred (1 1 1) orientation. The fabricated Ag/GCE sensor exhibited anexceptional electrocatalytic activity toward NO2 oxidation with a quick response time, high sensitivityand lower detection limit of 10 s, 1642.27 mAm M 1 cm 2 and 0.046 mM, respectively. Furthermore, theconstructed sensor exhibited long-term stability and excellent anti-interference properties, paving newdimensions for the utilization of bio-mediated nanocatalysts in electrochemical sensors.
Optical and electrochemical characteristics of Pb ions doped ZnO nanocrystals
N. Kannadasan,N. Shanmugam,S. Cholan,K. Sathishkumar,G. Viruthagiri,R. Poonguzhali 한국물리학회 2014 Current Applied Physics Vol.14 No.12
Herein, we report the optical and electrochemical properties of Pb ions doped ZnO nanocrystals fabricated via a simple chemical precipitation method. The structural and chemical compositions of the products are characterized by XRD, XPS, EDS and FT-IR spectroscopy. The observed results suggest that Pb ions are successfully incorporated into the ZnO lattice. The microstructures of the samples are analyzed by FESEM and confirmed by HRTEM. The PL emission spectra show an intensity quenching upon doping. Electrochemical performances show that the supercapacitor behavior of ZnO has been enhanced greatly on doping.
DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/β-Ga2O3 HEMT
R. Karpagam,S. Leones Sherwin Vimalraj,G. K. Sathishkumar,V. Megala,Y. Gowthami,B. Balaji 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.5
In this work, High Electron Mobility Transistor is grown on various Substrates such as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold voltage, whereas grown on β-gallium oxide (β-Ga2O3) to exhibit a positive threshold voltage. The optimization is done by using the pi-shaped gate and filed plate towards the drain and triple tooth metal for the proposed structure. In this, work Al0.8Ga0.2 N /AlN /GaN /AlN /Al0.4Ga0.6 N /GaN /AlN / Al0.8Ga0.2 N / β-Ga2O3 HEMT is proposed to improve the breakdown voltage, subthreshold swing. Β-Ga2O3 is prominent material to reduce the leakage current in the structure. It is observed from the obtained results that the Breakdown voltage for Si is 15 V, SiC is 20 V, Sapphire is 114 V, β-Ga2O3 is 125 V,d Unilateral power gain of 21.12dB, 19.56dB, 18.9dB, 9.5dB, at 851 GHz, 774 GHz, 738 GHz, 318 GHz when the proposed structure is grown on β-Ga2O3, SiC, Sapphire, Si substrates. In the proposed HEMT there is a compromise between frequency and breakdown voltage. If one factor improves the other reduces. But by using β-Ga2O3 as a substrate the achievement of both factors is possible. This is possible because of properly layering hetero-materials with matched lattice constant. β-Ga2O3 is a material that is a trend in the market and which resulted in intensive research. In the proposed structure Ferroelectric material i.e. lead Zirconate titanate oxide (PbZrTiO3) is used as a gate to reduce the power consumption and to increase the storage capacity in a unit area. Ferroelectric materials possess elevated dielectric constant and it has the capability of storing more charge per unit area when compared to other materials. In the small area, this material can store more data with low power consumption.