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S.P. Ratnayake,C. Sandaruwan,M.M.M.G.P.G. Mantilaka,N. de Silva,D. Dahanayake,U.K Wanninayake,W.R.L.N. Bandara,S. Santhoshkumar,E. Murugan,G.A.J.Amaratunga,K.M. Nalin de Silva 한국공업화학회 2021 Journal of Industrial and Engineering Chemistry Vol.95 No.-
A unique zirconia nanomorphology possessing an enhanced photocatalytic efficiency was developedutilizing a convenient single-sol synthesis process which involved in-situ doping of zirconia by boron. The boron-doped zirconia exhibited aflake morphology as opposed to the spherical pure form andsubsequent crystallographic investigations implied the phase conversion from binary to single-phasealong with the shape due to the doping. Optical characterization indicated a modified band structurewith newly generated isolated impurity states within the principle zirconia band edges. As per the X-rayspectroscopy data, boron was detected as chemically bound to oxygen while electron paramagneticresonance indicated the presence of an adsorbed oxygen lattice. During UV and simulated solarirradiation trials, respective removal capabilities of 90% and 93% of the model compound wereaccomplished, hence the effectiveness of the photocatalyst was confirmed. The enhanced photoactivityobserved in the UV region was attributed to combined effects of the boron-induced isolated impuritystates within principle band edges of zirconia, the defect-rich planer morphology, favorable interfacialinteractions and the greater availability of oxygen on the lattice. Developed nanoflakes are stable, inert,and efficient hence exhibiting compelling suitability in the remediation of harmful industrial organiccompounds.
Nanoscale memory cell based on a nanoelectromechanical switched capacitor
Jang, Jae Eun,Cha, Seung Nam,Choi, Young Jin,Kang, Dae Joon,Butler, Tim P.,Hasko, David G.,Jung, Jae Eun,Kim, Jong Min,Amaratunga, Gehan A. J. Springer Science and Business Media LLC 2008 Nature nanotechnology Vol.3 No.1
<P>The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory and carbon nanotube field-effect transistors, for ultra-large-scale integrated memory. Electromechanical devices are suitable for memory applications because of their excellent 'ON-OFF' ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements. Nanoelectromechanical devices based on carbon nanotubes have been reported previously, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines 'ON' and 'OFF' states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.</P>
Electron emission from arrays of carbon nanotubes/fibres
W. I. Milne,K. B. K. Teo,M. Chhowalla,G. A. J. Amaratunga,D. Pribat,P. Legagneux,G. Pirio,Vu Thien Binh,V. Semet 한국물리학회 2002 Current Applied Physics Vol.2 No.6
The overall aim of this work is to produce arrays of eld emitting microguns, based on carbon nanotubes, which can be utilised inthe manufacture of large area eld emitting displays, parallel e-beam lithography systems and electron sources for high frequency(MWCNTs) using a dc plasma technique and a Ni catalyst. We will discuss how the density of the carbon nanotube/bres can bevaried by reducing the deposition yield through nickel interaction with a diusion layer or by direct lithographic patterning of the Nicatalyst to precisely dene the position of each nanotube/bre. Details of the eld emission behaviour of the dierent arrays ofMWCNTS will also be presented.. 2002 Published by Elsevier Science B.V.
Aligned carbon nanotubes/fibers for applications in vacuum microwave devices
W.I.Milne,K.B.K.Teo,G.A.J.Amaratunga,R.Lacerda,P.Legagneux,G.Pirio,V.Semet,V.Thien Binh 한국물리학회 2004 Current Applied Physics Vol.4 No.5
Carbon nanotubes exhibit extraordinary eld emission properties because of their high electrical conductivity, ideal high aspectratio whisker-like shape for geometrical eld enhancement, and remarkable thermal stability. This paper will describe the PECVDgrowth of vertically aligned arrays of carbon nanotubes which are suitable for use as the electron emitters in a novel type ofmicrowave amplier capable of producing of order 10 W at 30 GHz.
Hot Electron Field Emission <i>via</i> Individually Transistor-Ballasted Carbon Nanotube Arrays
Li, Chi,Zhang, Yan,Cole, Matthew T.,Shivareddy, Sai G.,Barnard, Jon S.,Lei, Wei,Wang, Baoping,Pribat, Didier,Amaratunga, Gehan A. J.,Milne, William I. American Chemical Society 2012 ACS NANO Vol.6 No.4
<P>We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source–drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2012/ancac3.2012.6.issue-4/nn300111t/production/images/medium/nn-2012-00111t_0006.gif'></P>