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- 저자 : Fukai Shan (검색결과 3 건)
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Fukai Shan,Yun-Sik Yu 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.52
As an ecient method for producing a high-quality plasma with the pulsed laser deposition (PLD) technique, an excimer laser is one of the most excellent devices for depositing thin lms, especially for depositing metal-oxide thin lms. In this work, an excimer laser is used to ablate an Al-doped ZnO target (2 wt.%) and to deposit thin lms on glass substrates at dierent substrate temperatures (room temperature, 100, 200, 300, 400, and 500 C). Spectroscopic ellipsometry (SE) is applied to characterize the thin lms. The measured spectra are analyzed using the Sellmeier dispersion relation. The refractive indices and thicknesses of the thin lms are extracted from the SE data analysis by employing two dierent models and the eective medium approximation. The optical functions of the thin lms deposited at higher temperatures are found to have the normal dispersion behavior in the visible range. However, the refractive indices of the thin lms deposited at low temperatures deviate from the normal value. The refractive indices of Al-doped ZnO thin lms deposited at higher temperatures are in the range of 1.9 2.1, which are reasonable values for polycrystalline ZnO thin lms.
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Fukai SHAN,B. C. Shin,G. X. Liu,W. J. Lee,Y. C. Kim 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
In$_2$O$_3$-doped ZnO thin films (In: 0.1 at.\%) were deposited on sapphire (0001) substrates at various temperatures (100 -- 600 $^{\circ}$C) by using pulsed laser deposition technique. An X-ray diffractometer was used to investigate the structural properties of the thin films. The thin films were found to have a preferred (002) orientation, and the peak intensity of the (002) orientation was found to increase with increasing growth temperature. With increasing growth temperature, the peak position of the ZnO (002) orientation shifted to the larger-angle side. An atomic force microscope was used to investigate the surface morphologies of the thin films. The grain size and the roughness of the thin films increased with increasing growth temperature. The transmittances of the thin films measured with a spectrophotometer were used to derive the band gap energies of the thin films. The band gap energies of In$_2$O$_3$-doped ZnO thin films were found to be larger than the undoped ZnO thin film due to the Burstein-Moss effect, and the band gap energy was found to decrease with increasing growth temperature. A spectrometer was used to investigate the photoluminescent (PL) properties of the thin films. All of the thin films showed near-band-edge emission and no deep-level emissions. This is due to the compensation of the oxygen vacancies in the thin films. Comparing the band-gap energies calculated from the absorption edge and the peak positions of the PL spectra, we calculated the Stokes shifts for the thin films. Hall measurements indicated that all the thin films were n-type semiconductors. The resistivity decreased and the mobility increased with increasing growth temperature.
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Physical Properties of Epitaxial Zn1–xCuxO Films Fabricated by Using Pulsed Laser Deposition
안균,Fukai Shan,김종만,정세영,조채룡,김종필,진종성,김현규 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.9
Cu-doped ZnO (CZO) thin films (0–3 mol% Cu content) were grown on GaN/Al2O3 substrates at 700 °C by using the pulsed laser deposition technique. The XRD results confirmed that the CZO films grew epitaxially and that a few Cu related phases were involved in their growth. The intensity of the green emission peak observed in the photoluminescence (PL) spectra initially increased up to a Cu doping content of 1 mol% but decreased significantly at higher values of the doping content. The saturation magnetization of the CZO film with a Cu content of 0.8 mol% at room temperature was 1.28 emu/cc.
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