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RISS 인기검색어
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- 저자 : Faqi Zhan (검색결과 2 건)
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Quasi-nanocrystalline ZrB2 powder synthesized by saltassisted combustion and its formation mechanism
Faqi Zhan,Ru Bai,Xiao Liu,Ke Xu,Hua Zhang,Min Zhu,Yuehong Zheng,Shipeng Xu,Jie Sheng,Peiqing La 한양대학교 청정에너지연구소 2024 Journal of Ceramic Processing Research Vol.25 No.4
Nanoscale ceramic powders are very important for sintering densification and deviceization. A new salt-assisted combustionsynthesis process was used to prepare pure quasi-nanocrystalline zirconium diboride (ZrB2) powder on a large scale. TheZrO2-B2O3-Mg system with single NaCl salt and NaCl-KCl mixed salts as diluents was adopted to prepare ZrB2 powders. The results show that high-purity ZrB2 quasi-nanocrystalline powder with average size of ~105 nm and purity of 99.24% wasobtained by adding molten salts diluent. The impurity mainly existed in the form of Mg0.2Zr0.8O1.8 phase and Mg3B2O6 phase. The effects of diluent content and type on the adiabatic temperature, powder purity, particle size and microstructure of thesystem were studied. This work will provide theoretical basis and technical support for large-scale preparation of boride nanoceramicpowders.
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S-C3N4 Quantum Dot Decorated ZnO Nanorods to Improve Their Photoelectrochemical Performance
Haizhou He,Jie Li,Yang Liu,Qiong Liu,Faqi Zhan,Yaomin Li,Wenzhang Li,Jin Wen 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2017 NANO Vol.12 No.5
"S-doped C3N4 quantum dots (SCNQDs) were synthesized successfully by a low-temperature solid-phase method. The as-synthesised SCNQDs were decorated on ZnO nanorods by a dipping method. The ZnO nanorod films were prepared through a two-stage method, including pulse electrodeposition for depositing ZnO seed layer on fluorine doping SnO2 glass (FTO) and chemical bath for growing ZnO nanorods on the ZnO seed layer. The prepared samples were characterized via scanning electron microscope (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), UV-vis absorption spectroscopy, X-ray photoelectron spectroscopy (XPS). The photoelectrochemical performances of the prepared samples were estimated using linear sweep voltammograms, electrochemical impedance spectra (EIS), Mott–Schottky, transient photocurrent and incident photon-to-current conversion efficiency (IPCE). The results show that the light absorption edge of the prepared SCNQDs increases from 326 nm (CNQDs) to 349 nm after S doping. The CNQD decorated ZnO photoanode film exhibits 1.34 times as high photocurrent as bare ZnO photoanode film. Importantly, the photocurrent increased to 1.79 times than bare ZnO photoanode film by S doping at 1.0 V (versus Ag/AgCl), which is attributed to a wider light absorption of SCNQDs and a better efficiency of electron transfer in the interface between SCNQDs and ZnO."
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