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Semi-Insulating 4~6-Inch GaAs Crystals Grown in Low Temperature Gradients by the VCz Method
P.Rudolph,M.Czupalla,Ch.Frank-Rotsch,F.Kiessling,M.Neubert,M.Pietsch 한양대학교 세라믹연구소 2003 Journal of Ceramic Processing Research Vol.4 No.2
The results of growth of semi-insulating GaAs crystals with diameters of 100-150 mm and lengths up to 200 mm from the melt with starting charges up to 25 kg by the low-temperature gradient Vapour Pressure Controlled Czochralski method (VCz) are given and compared with the state of art of LEC growth. The methodical process optimization was assisted by global numerical simulations. A slightly convex interface morphology has been found to be the most suitable for moderate EPD of ~104 cm-2 in 150-mm crystals whilst simultaneously depressing the probability of dislocation bunchings. The carbon concentration was controlled down to values below 1014 cm-3. Electrical properties, including the EL2° content, are discussed. The first results of GaAs VCz crystals grown without B2O3 encapsulant are given. A reduced boron concentration but enhanced carbon and vacancy concentrations have been observed.