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Electrical Properties of ZnO-Based Nanostructur
Eva Schlenker,Andrey Bakin,Hergo-Heinrich Wehmann,Augustine Che Mofor,Arne Behrends,Andreas Waag 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Single ZnO nanowires grown by vapor phase transport were contacted by Ti/Au electrodes patterned by using e-beam lithography. The current-voltage characteristics display a rectifying behavior, likely due to an interfacial insulating layer between the metal and the semiconductor. The contact resistance was determined to 85 M , the deduced carrier concentration yields 1015 cm-3 which is low and hints towards Fermi-level pinning at surface states. Spectrally-resolved photoconduction measurements reveal an increase in current only for illumination with light at an energy above the band gap energy. Scanning electron micrographs of the metal-nanowire interface show a smearing of the electrodes; however, energy dispersive X-ray element maps could not expose the elemental composition of the blurry regions. Single ZnO nanowires grown by vapor phase transport were contacted by Ti/Au electrodes patterned by using e-beam lithography. The current-voltage characteristics display a rectifying behavior, likely due to an interfacial insulating layer between the metal and the semiconductor. The contact resistance was determined to 85 M , the deduced carrier concentration yields 1015 cm-3 which is low and hints towards Fermi-level pinning at surface states. Spectrally-resolved photoconduction measurements reveal an increase in current only for illumination with light at an energy above the band gap energy. Scanning electron micrographs of the metal-nanowire interface show a smearing of the electrodes; however, energy dispersive X-ray element maps could not expose the elemental composition of the blurry regions.
Dye-Sensitized Solar Cells on the Basis of ZnO Nanorods
Bianca Postels,Anna Kasprzak,Tobias Buergel,Andrey Bakin,Eva Schlenker,Hergo-Heinrich Wehmann,Andreas Waag 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
We report on the fabrication of solid-state dye-sensitized solar cells with ZnO nanorods as n-type material and CuSCN as p-type material. The ZnO nanorods were grown on ITO-coated glass by using a low-temperature aqueous chemical growth approach employing dierent growth times. If the growth time is changed, the nanorod morphology can be varied in lentgh and diameter. CuSCN was deposited on the dye-coated ZnO nanorods from a solution in di-n-propyl sulphide, so that the nanorods are fully embedded in CuSCN. The ZnO/dye/CuSCN solar cells show photocurrents of 0.26 mA/㎠, an open circuit voltage of 0.34 V and an energy conversion efficiency of 0.1 %. We report on the fabrication of solid-state dye-sensitized solar cells with ZnO nanorods as n-type material and CuSCN as p-type material. The ZnO nanorods were grown on ITO-coated glass by using a low-temperature aqueous chemical growth approach employing dierent growth times. If the growth time is changed, the nanorod morphology can be varied in lentgh and diameter. CuSCN was deposited on the dye-coated ZnO nanorods from a solution in di-n-propyl sulphide, so that the nanorods are fully embedded in CuSCN. The ZnO/dye/CuSCN solar cells show photocurrents of 0.26 mA/㎠, an open circuit voltage of 0.34 V and an energy conversion efficiency of 0.1 %.