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Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure
Nguyen, Trung Do,Pham, Kim Ngoc,Tran, Vinh Cao,TuanNguyen, Duy Anh,Phan, Bach Thang Institute of Korean Electrical and Electronics Eng 2013 전기전자학회논문지 Vol.17 No.3
We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.
Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure
Trung Do Nguyen,Kim Ngoc Pham,Vinh Cao Tran,Duy Anh TuanNguyen,Bach Thang Phan 한국전기전자학회 2013 전기전자학회논문지 Vol.17 No.3
We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.