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Ming-Chun Tseng,Dong-Sing Wuu,Chi-Lu Chen,Hsin-Ying Lee,Ray-Hua Horng 한국물리학회 2017 Current Applied Physics Vol.17 No.7
Aluminum-doped zinc oxide (AZO) thin films used for ohmic contact layers on carbon-doped GaP window layers (p-GaP:C) of AlGaInP light-emitting diodes were fabricated and characterized. AZO thin films with different Zn:Al cycle ratios (15:1, 20:1, and 25:1) were deposited on p-GaP:C window layers through atomic layer deposition. The contact characteristics of the AZO thin films on p-GaP:C were considerably changed from Schottky contact to ohmic contact after rapid thermal annealing (RTA) at 350 C for 1 min. The most favorable specific contact resistance of AZO/p-GaP:C was evaluated using a circular transmission line model as 6.3 103 U/cm2. Angle-resolved X-ray photoelectron spectroscopy was employed to understand the ohmic contact behavior of AZO/p-GaP:C. After RTA, Zn atoms in the AZO thin films notably diffused into the p-GaP:C layers and Ga atoms diffused out of the p-GaP:C layer. Therefore, the Ga vacancies were occupied by Zn atoms, which increased the doping concentration in the near-surface region of p-GaP:C and reduced the depletion region width of the semiconductor region. Thus, numerous carriers were able to tunnel through the reduced Schottky barrier and those carriers produced the ohmic contact behavior between the AZO and p-GaP:C.
Metal Chloride Precursor Synthesization of Cu2ZnSnS4 Solar Cell Materials
Min Yen Yeh,Yu-Fong Huang,Cheng-Liang Huang,Chyi-Da Yang,Dong-Sing Wuu,Po-Hsun Lei 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.2
Cu2ZnSnS4 (CZTS) thin films with kesterite structures were prepared by directly sol-gel synthesizingspin-coated precursors on soda-lime-glass (SLG) substrates. The CZTS precursors wereprepared by using solutions of copper (II) chloride, zinc (II) chloride, tin (IV) chloride, and thiourea. The ratio of SnCl4 in the precursors was found to play a critical role in the synthesization of CZTS. CZTS phases of SnS and SnS2 were observed in the synthesized films as prepared using precursorswith a close to stoichiometric ratio of CuCl2:ZnCl2:SnCl4:CH4N2S = 4:1:1:8, where SnCl4 was 1mol/l. The amounts of the educed SnS and SnS2 phases observed in the SEM images could bereadily reduced by decreasing the volume of SnCl4 in the mixed solution. With decreasing amountof SnCl4 from 1 mol/l, the as prepared CZTS reveals a significant improvement in its crystallineproperties. In this work, CZTS with an average absorption coefficient and an optical energy gapof over 104 cm−1 and 1.5 eV, respectively, was obtained using precursors of copper (II) chloride,zinc (II) chloride, tin (IV) chloride, and thiourea mixed in a ratio of 2:1:0.25:8, and it had goodcrystallinity revealing a Cu-poor composition.