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중국 프로축구 지도자의 지도성향과 리더십 행동 유형에 관한 연구
강동원,이천식,이정학 한국스포츠리서치 2004 한국 스포츠 리서치 Vol.15 No.6
The purpose of this study was to study of the teaching trend and leadership type of the prfessional soccer leaders of China. Regarding the questionnaire, the study of based on the leadership scale for sports (LSS) developed by Chelladurai arid Saleh(1980), was translated and restructured suitable to the purpose of this study. In summary, positive behaviors impacted the goal-oriented type of leadership most in terms of leadership type, and authoritative behavior and democratic behavior impacted less. The training and direction behavior element was the most influential to the morale enhancing type of leadership. Especially, the authoritative behavior element was shown to be negatively influential. The democratic behavior factor was the most influential to the reliability-oriented type of leadership. The positive behavior element impacted less. However, the training and directive behavior and authoritative behavior element did not influence.
50W 출력전력 특성을 갖는 0.25μm GaN-on-SiC HEMT
강동민(Dong-Min Kang),민병규(Byung-Gyu Min),이종민(Jong-Min Lee),윤형섭(Hyung-Sup Yoon),김성일(Sung-Il Kim),안호균(Ho-Kyun Ahn),조규준(Kyu-Jun Cho),김동영(Dong-Young Kim),이상흥(Sang-Heung Lee),김해천(Hae-Cheon Kim),임종원(Jong-Won L 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
This paper describes the successful development and the performance of a 50 W GaN-on-SiC High Electron Mobility Transistor(HEMT) The GaN HEMT with a gate length of 0.25μm and a total gate width of 12 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 52 W output power operated at 30 V drain voltage in pulse operation with a pulse width 100 us and 10 % duty cycle at X-band. It also shows a maximum output power density of 4.16 W/mm. The X-band pulsed power amplifier exhibited an output power of 52 W(47.2 dBm) with a power gain of 11.5 dB in a frequency range of 9.2 – 9.5 GHz. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.