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Kang, J. H.,Johar, M.,Alshehri, B.,Dogheche, E.,Ryu, S. W. Royal Society of Chemistry 2017 Journal of Materials Chemistry C Vol.5 No.45
<P>The growth of arrayed GaN nanobridges (NBs) and their application in a photodetector (PD) were studied. First, GaN nanowires (NWs) were selectively grown on the sidewalls of a GaN mesa using an Au catalyst-assisted vapor-liquid-solid (VLS) method, while their density was conveniently controlled by varying the dilution of the Au nanopartide colloidal solution. It was revealed that an m-axis NW was preferentially fabricated on both the m-plane and a-plane sidewalk. A two-step VLS-VS growth technique was utilized for the radial core-shell structure composed of GaN, InGaN and InGaN/GaN multi-quantum wells (MQWs) that allowed independent control of the NW diameter. Finally, core-shell NBs were fabricated across a trench formed between two GaN mesas to be used as a Eight absorbing medium in a photoconductor. Their optical response was measured at various wavelengths and InGaN/GaN MQWs embedded in the core-shell structure exhibited an enhanced photoresponse to visible Eight.</P>