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Recent Progress in Tungsten Oxides based Memristors and their Neuromorphological Applications
Bo Qu,Adnan Younis,Dewei Chu 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.6
The advance in conventional silicon based semiconductor industry is nowbecoming indeterminacy as it still along the road of Moore’s Law and concomitantproblems associated with it are the emergence of a number of practical issues suchas short channel effect. In terms of memory applications, it is generally believedthat transistors based memory devices will approach to their scaling limits up to2018. Therefore, one of the most prominent challenges today in semiconductorindustry is the need of a new memory technology which is able to combine the bestcharacterises of current devices. The resistive switching memories which areregarded as “memristors” thus gain great attentions thanks to their specificnonlinear electrical properties. More importantly, their behaviour resembles withthe transmission characteristic of synapse in biology. Therefore, the research ofsynapses biomimetic devices based on memristor will certainly bring a greatresearch prospect in studying synapse emulation as well as building artificialneural networks. Tungsten oxides (WOx) exhibits many essential characteristics asa great candidate for memristive devices including: accredited endurance (over 105cycles), stoichiometric flexibility, complimentary metal-oxide-semiconductor(CMOS) process compatibility and configurable properties including non-volatilerectification, memorization and learning functions. Herein, recent progress onTungsten oxide based materials and its associating memory devices had beenreviewed. The possible implementation of this material as a bio-inspired artificialsynapse is also highlighted. The penultimate section summaries the currentresearch progress for tungsten oxide based biological synapses and end up withseveral proposals that have been suggested for possible future developments.
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Pan, Ying,Wan, Tao,Du, Haiwei,Qu, Bo,Wang, Danyang,Ha, Tae-Jun,Chu, Dewei Elsevier 2018 JOURNAL OF ALLOYS AND COMPOUNDS Vol.757 No.-
<P><B>Abstract</B></P> <P>In this study, a transparent memristor with a configuration of Au/SnO<SUB>2</SUB>/FTO is fabricated by a simple solution process at low temperature and further utilized to mimic biological synapses. A series of significant synaptic functions, including nonlinear transmission characteristics, spike-rate-dependent plasticity (SRDP), short-term plasticity (STP) and long-term plasticity (LTP) are emulated. The transition from short-term to long-term plasticity is also investigated in the device by repeated stimulation. The nonlinear rectification characteristic in the current memristor is attributed to the Schottky barrier at the Au/SnO<SUB>2</SUB> interface. By controlling the oxygen vacancy migration induced under electrical input, the barrier at the interface can be modified, giving rise to the different synaptic functions. These results suggest that the proposed Au/SnO<SUB>2</SUB>/FTO memristor in this study is a promising synaptic device for artificial neural network applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Synaptic electronic based on Au/SnO<SUB>2</SUB>/FTO memristor was fabricated through a simple solution process at low temperature. </LI> <LI> Synaptic plasticity including SRDP, STP, LTP and STP-to-LTP transition were demonstrated in the synaptic device. </LI> <LI> Different synaptic functions were realised by controlling oxygen vacancy migration induced by electrical input. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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