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C.E. Rodríguez-García,N. Perea-López,S.P. DenBaars,G.A. Hirata 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.5
Red-emitting phosphor powders of SrIn2O4 activated with Eu3+ ions were synthesized by a high pressure assisted combustion method. X-ray diffraction analysis of the crystalline properties of these powders revealed single phase SrIn2O4 for Eu concentrations up to 4 atomic % of Eu. The photo and cathodoluminescence emission spectra of SrIn2O4: Eu3+ powder shows bright red emission mainly caused by the 5D0→7F2 intra-shell transition of Eu3+. Furthermore, photoluminescence excitation (PLE) spectroscopy revealed that an efficient energy transfer from the SrIn2O4 host lattice onto the Eu ions is accomplished in addition to the excitation band peaked at λ = 396 nm that directly excites the Eu ions, making this material an excellent candidate for applications in solid state white-emitting lamps. Red-emitting phosphor powders of SrIn2O4 activated with Eu3+ ions were synthesized by a high pressure assisted combustion method. X-ray diffraction analysis of the crystalline properties of these powders revealed single phase SrIn2O4 for Eu concentrations up to 4 atomic % of Eu. The photo and cathodoluminescence emission spectra of SrIn2O4: Eu3+ powder shows bright red emission mainly caused by the 5D0→7F2 intra-shell transition of Eu3+. Furthermore, photoluminescence excitation (PLE) spectroscopy revealed that an efficient energy transfer from the SrIn2O4 host lattice onto the Eu ions is accomplished in addition to the excitation band peaked at λ = 396 nm that directly excites the Eu ions, making this material an excellent candidate for applications in solid state white-emitting lamps.
Nanoindentation of Laterally Overgrown Epitaxial Gallium Nitride
M. Martyniuk,G. Parish,H. Marchand,P.T. Fini,S.P DenBaars,L. Faraone 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.2
Nanoindentation has been used to investigate and compare the mechanical properties of GaN grown by the lateral epitaxial overgrowth (LEO) method and the defective seed region prepared by metalorganic chemical vapour deposition. Common modulus of elasticity values (~230 GPa) and hardness values (~19 GPa) were found for both materials. The GaN response to nanoindentation was found to be purely elastic for low inden-tation loads with the onset of plasticity being marked by discontinuities or “pop-in” events in the indenter load-penetration curves. The maximum shear stress under the indenter at pop-in events for LEO GaN cor-responds well with the critical shear stress necessary for homogeneous dislocation nucleation, indicating that the defects in this region are too sparse and do not aid in dislocation nucleation.
배시영,D.S. Lee,B.H. Kong,H.K. Cho,J.F. Kaeding,S. Nakamura,S.P. DenBaars,J.S. Speck 한국물리학회 2011 Current Applied Physics Vol.11 No.3
(1122) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1° to +1°. While the coexistence of (1122) surface and inclined {1011}surfaces was observed on GaN films on the on-axis m-plane sapphire substrates,{1011}surfaces were dominant on the GaN films on the +1° miscut sapphire substrates. As the miscut angle was changed from -1° to +1°, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.
Bae, S.Y.,Lee, D.S.,Kong, B.H.,Cho, H.K.,Kaeding, J.F.,Nakamura, S.,DenBaars, S.P.,Speck, J.S. Elsevier 2011 Current Applied Physics Vol.11 No.3
(112@?2) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1<SUP>o</SUP> to +1<SUP>o</SUP>. While the coexistence of (112@?2) surface and inclined {101@?1} surfaces was observed on GaN films on the on-axis m-plane sapphire substrates, {101@?1} surfaces were dominant on the GaN films on the +1<SUP>o</SUP> miscut sapphire substrates. As the miscut angle was changed from -1<SUP>o</SUP> to +1<SUP>o</SUP>, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.