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Choi, Woong,Cho, Mi Yeon,Konar, Aniruddha,Lee, Jong Hak,Cha, Gi‐,Beom,Hong, Soon Cheol,Kim, Sangsig,Kim, Jeongyong,Jena, Debdeep,Joo, Jinsoo,Kim, Sunkook WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.43
<P>Sunkook Kim, Jinsoo Joo, and co‐workers demonstrate on page 5832 phototransistors based on multilayer MoS<SUB>2</SUB> crystals with a wider spectral response and higher photoresponsivity than single‐layer MoS<SUB>2</SUB> phototransistors. These multilayer MoS<SUB>2</SUB> phototransistors also exhibit high room‐temperature mobilities, near‐ideal subthreshold swings, low operating gate biases, and negligible shifts in the threshold voltages during illumination. </P>