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RISS 인기검색어
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- 저자 : David Kirsch (검색결과 2 건)
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Using genetically engineered mouse models to study cancer and radiation biology
David Kirsch 한국실험동물학회 2021 한국실험동물학회 학술발표대회 논문집 Vol.2021 No.7
Genetically engineered mouse models are powerful systems to study cancer and radiation biology. We have employed several genetic tools to model cancer and dissect mechanisms of tumor and normal tissue response to radiation therapy. For example, we have used Cre-loxP technology to delete genes in a cell-type specific manner to study the cell types and molecular pathways that regulate the response of the intestine to radiation damage. We have also utilized in vivo shRNA to reversibly block p53 during total body irradiation to make the surprising discovery that during total body irradiation the tumor suppressor p53 promotes radiation-induced thymic lymphoma via a non-cell autonomous mechanism. We have also generated p53FRT mice in which FRT sites flank p53, so that it can be deleted by FLP recombinase. We combined the FLP/FRT system with the Cre/loxP system to enable dual recombinase technology where FLP initiates cancer and Cre can delete genes in specific stromal cell populations to dissect the role of endothelial cells, neutrophils, and other cell types in tumor response to radiation therapy. More recently, we have adapted CRISPR/Cas9 technology to initiate cancer. CRISPR technology can initiate tumors in wild type mice thereby decreasing the cost and time required to study cancer in animal models. We have applied CRISPR/Cas9 to study metastasis and the response of cancer to radiation and immunotherapy.
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Jinwoo Noh,Minseok Jo,Chang Yong Kang,Gilmer, David,Kirsch, Paul,Lee, Jack C.,Byoung Hun Lee IEEE 2013 IEEE electron device letters Vol.34 No.9
<P>A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfO<SUB>x</SUB>-based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOx-based ReRAM devices.</P>
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