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Sang-HyeonLee,JaekyuLee,YongseokAhn,DaewonHa,GwanhyeobKoh,TaeyoungChung,KinamKim,HyungSooUh 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
If the tight electrical performance requirements of the cell transistors used in giga-bit density DRAM are to be met, the leakage currents through the junction and the transistor should be controlled very carefully. In this paper, we propose a novel cell transistor using LOcalized Channel and Field Implantation (LOCFI) for low-power, reliable operation in a giga-bit density DRAM and beyond. When a LOCFI cell transistor is used, the data retention time is greatly improved by virtue of the reduced cell leakage currents resulting from the suppressed ion implantation damage at the storage node.