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Initial Evaluation of 99mTc(CO)3(ASMA) as a Renal Tracer in Healthy Human Volunteers
Malgorzata Lipowska,Jeffrey Klenc,Russell D. Folks,Andrew T. Taylor 대한핵의학회 2014 핵의학 분자영상 Vol.48 No.3
Purpose Preclinical studies in rats showed that two of99mTc(CO)3(ASMA) isomers (rac- and L-ASMA) had pharmacokineticproperties equivalent to that of 131I-OIH, theradiopharmaceutical standard for the measurement of effectiverenal plasma flow. The aim of this study was to evaluatethe pharmacokinetics of 99mTc(CO)3(ASMA) isomers inhealthy human subjects. Methods Three ASMA ligands (rac-, L- and D-ASMA) werelabeled with 99mTc(CO)3 using an IsoLink kit (Covidien), andeach formed 99mTc(CO)3(ASMA) tracer was co-injected with131I-OIH into healthy human subjects followed by sequentialimaging, plasma clearance measurements and timed urinecollection. Plasma protein binding, red cell uptake and percentinjected dose in the urine were determined. Urine from eachgroup of volunteers was analyzed for metabolites by HPLC. Results Image quality was excellent with all three agents. Each 99mTc(CO)3(ASMA) preparation was excreted unchangedin the urine. The plasma clearance ratio(99mTc(CO)3(ASMA)/131I-OIH) was 81±3 % for D-ASMAcompared to only 20±4 % for L-ASMA and 37±7 % for rac-ASMA; the 81%clearance ratio for D-ASMA isomer is still∼30 % higher than the 99mTc-MAG3/131I-OIH clearance ratio(∼50-60 %). Red cell uptake was similar for all three tracers(6-9 %), and all tracers had a relatively rapid renal excretion;at 3 h, the 99mTc(CO)3(ASMA)/131I-OIH urine ratio was 100±3%for D-ASMA, 80±2%for L-ASMA and 88±1%for rac-ASMA. Conclusions The renal excretion characteristics of99mTc(CO)3(D-ASMA) in humans are superior to those ofthe other two 99mTc(CO)3(ASMA) isomers studied, but arestill inferior to 131I-OIH, even though there was no differencein the clearance of two of 99mTc(CO)3(ASMA) isomers and131I-OIH in rats. The work described here demonstrates thes e n s i t i v i t y i n i n vivo biologi c a l behavior of99mTc(CO)3(ASMA) isomers to their subtle structuraldifferences.
Taylor, Stuart G.,Farinholt, Kevin M.,Park, Gyuhae,Todd, Michael D.,Farrar, Charles R. Techno-Press 2010 Smart Structures and Systems, An International Jou Vol.6 No.5
This paper presents recent developments in an extremely compact, wireless impedance sensor node (the WID3, $\underline{W}$ireless $\underline{I}$mpedance $\underline{D}$evice) for use in high-frequency impedance-based structural health monitoring (SHM), sensor diagnostics and validation, and low-frequency (< ~1 kHz) vibration data acquisition. The WID3 is equipped with an impedance chip that can resolve measurements up to 100 kHz, a frequency range ideal for many SHM applications. An integrated set of multiplexers allows the end user to monitor seven piezoelectric sensors from a single sensor node. The WID3 combines on-board processing using a microcontroller, data storage using flash memory, wireless communications capabilities, and a series of internal and external triggering options into a single package to realize a truly comprehensive, self-contained wireless active-sensor node for SHM applications. Furthermore, we recently extended the capability of this device by implementing low-frequency analog-to-digital and digital-to-analog converters so that the same device can measure structural vibration data. The compact sensor node collects relatively low-frequency acceleration measurements to estimate natural frequencies and operational deflection shapes, as well as relatively high-frequency impedance measurements to detect structural damage. Experimental results with application to SHM, sensor diagnostics and low-frequency vibration data acquisition are presented.
Observation of two spin gap energies in the filled skutterudite compoundCeOs4Sb12
Adroja, D. T.,Park, J.-G.,Goremychkin, E. A.,McEwen, K. A.,Takeda, N.,Rainford, B. D.,Knight, K. S.,Taylor, J. W.,Park, Jeongmi,Walker, H. C.,Osborn, R.,Riseborough, Peter S. American Physical Society 2007 Physical review. B, Condensed matter and materials Vol.75 No.1
Structural Health Monitoring of Research-Scale Wind Turbine Blades
Taylor, Stuart G.,Farinholt, Kevin M.,Park, Gyu Hae,Farrar, Charles R.,Todd, Michael D.,Lee, Jung Ryul Trans Tech Publications, Ltd. 2013 Key Engineering Materials Vol.558 No.-
<P>This paper presents ongoing work by the authors to implement real-time structural health monitoring (SHM) systems for operational research-scale wind turbine blades. The authors have been investigating and assessing the performance of several techniques for SHM of wind turbine blades using piezoelectric active sensors. Following a series of laboratory vibration and fatigue tests, these techniques are being implemented using embedded systems developed by the authors. These embedded systems are being deployed on operating wind turbine platforms, including a 20-meter rotor diameter turbine, located in Bushland, TX, and a 4.5-meter rotor diameter turbine, located in Los Alamos, NM. The SHM approach includes measurements over multiple frequency ranges, in which diffuse ultrasonic waves are excited and recorded using an active sensing system, and the blades global ambient vibration response is recorded using a passive sensing system. These dual measurement types provide a means of correlating the effect of potential damage to changes in the global structural behavior of the blade. In order to provide a backdrop for the sensors and systems currently installed in the field, recent damage detection results for laboratory-based wind turbine blade experiments are reviewed. Our recent and ongoing experimental platforms for field tests are described, and experimental results from these field tests are presented. <I>LA-UR-12-24691</I>.</P>
Properties of Selective-Area-Growth GaN Grown on Various Buffered Si(111) Substrates by HVPE
D. H. Shin,S. N. Yi,J. H. Na,K. H. Lee,M. K. Bae,R. A. Taylor,박승환,S. H. Doh 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
Selective area growth (SAG) of GaN by hydride vapor phase epitaxy (HVPE) has been performed on SiO$_2$ stripe-mask-patterned Si(111) substrates with various buffer layers. AlGaN, GaN and AlN films were used as buffer layers. In order to grow selectively, the orientation of the SiO$_2$ mask pattern was opened along the Si $\langle$\={1}10$\rangle$ direction. The properties of the SAG-GaN samples were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence(PL). SEM images show that hexagonal SAG-GaN grows vertically along the $\langle$0001$\rangle$ direction, longitudinally along the $\langle$11\={2}0$\rangle$ direction with facets on the sidewall growing along the (1\={1}01) direction. It was found that the lateral-to-vertical growth ratio depended strongly on different buffer layers.
Fatigue crack detection performance comparison in a composite wind turbine rotor blade
Taylor, Stuart G,Park, Gyuhae,Farinholt, Kevin M,Todd, Michael D SAGE Publications 2013 Structural health monitoring Vol.12 No.3
<P>This article presents the detection performance results for multiple detectors or test statistics, using different active-sensing hardware systems in identifying the presence and location of a through-thickness fatigue crack in a 9-m composite wind turbine rotor blade. The rotor blade underwent ~8.5 million cycles of fatigue loading until failure, when a 30-cm-long crack surfaced on the leading edge portion of the blade’s transitional root area. The rotor blade was cantilevered on a 7-ton test stand and excited using a hydraulically actuated resonant excitation system, which drove the rotor blade at its first natural frequency. Through the course of the test, data were collected using two distinct types of acquisition hardware: one designed for ultrasonic-guided wave interrogation and the other for diffuse wave field interrogation. This article presents the fatigue crack detection performance results for several hardware and test statistic combinations.</P>
Real-Time Auditing of Domotic Robotic Cleaners
D. Papadogkonas,M. Zoumboulakis,Jenson Taylor,Mark Levene,George Roussos 보안공학연구지원센터 2008 International Journal of Smart Home Vol.2 No.1
Domotic Robotic Cleaners are autonomous devices that are designed to operate almost entirely unattended. In this paper we propose a system that aims to evaluate the performance of such devices by analysis of their trails. This concept of trails is central to our approach, and it encompasses the traditional notion of a path followed by a robot between arbitrary numbers of points in a physical space. We enrich trails with context-specific metadata, such as proximity to landmarks, frequency of visitation, duration, etc. We then process the trail data collected by the robots, we store it an appropriate data structure and derive useful statistical information from the raw data. The usefulness of the derived information is twofold: it can primarily be used to audit the performance of the robotic cleaner –for example, to give an accurate indication of how well a space is covered (cleaned). And secondarily information can be analyzed in real-time to affect the behavior of specific robots – for example to notify a robot that specific areas have not been adequately covered. Towards our first goal, we have developed and evaluated a prototype of our system that uses a particular commercially available robotic cleaner. Our implementation deploys adhoc wireless local networking capability available through a surrogate device mounted onto this commodity robot; the device senses relative proximity to a grid of RFID tags attached to the floor. We report on the performance of this system in experiments conducted in a laboratory environment, which highlight the advantages and limitations of our approach.
D.H. Shin,S.N. Yi,A.M. Green,H.M. Cho,J.H. Na,M.K. Bae,R.A. Taylor,S.H. Park,Y.J. Cho 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
We have studied the effect of annealing AlN buffer layers on the properties of subsequently grown GaN layers. The AlN buffer layer was deposited on a Si(111) substrate by using RF sputtering, and different samples were then annealed at temperatures of 700 C, 800 C, and 900 C. Thick GaN was grown using a hydride vapor phase epitaxy (HVPE) system for 1 hour at 1050 C with the resultant thickness being 150 μm. The morphologies of the AlN and the GaN layers were observed by using both atomic force microscopy (AFM) and scanning electron microscopy (SEM). The surface roughness and grain size of the AlN buffer layer was increased by raising the annealing temperature; this was accompanied by an improvement in the two-dimensional lateral growth of the GaN layer. X-Ray diffraction (XRD) patterns showed the typical results expected for GaN (0002) and (0004) faces, revealing a highly preferred orientation of the GaN(0001) surface. However, a residual compressive stress was observed between the GaN and the Si substrate, independent of the annealing treatment of the buffer layer.bp#?