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OH, Jungwoo,HUANG, Jeff,OK, Injo,LEE, Se-Hoon,D. KIRSCH, Paul,JAMMY, Raj,LEE, Hi-Deok The Institute of Electronics, Information and Comm 2011 IEICE transactions on electronics Vol.94e.c No.5
<P>We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D<SUB>it</SUB>) and specific contact resistivity (<I>ρ<SUB>c</SUB></I>).</P>