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On the Etching Mechanism of Parylene-C in Inductively Coupled O<sub>2</sub> Plasma
Shutov, D.A.,Kim, Sung-Ihl,Kwon, Kwang-Ho The Korean Institute of Electrical and Electronic 2008 Transactions on Electrical and Electronic Material Vol.9 No.4
We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.
Shutov, D.A.,Kang, Seung-Youl,Baek, Kyu-Ha,Suh, Kyung-Soo,Min, Nam-Ki,Kwon, Kwang-Ho The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.5
Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.
Inductively-Coupled Nitrous-Oxide Plasma Etching of Parylene-C Films
D. A. Shutov,강승열,백규하,서경수,권광호 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
In this article, we report results obtained from a study carried out on inductively-coupled plasma (ICP) etching of poly-monochloro-para-xylylene (parylene-C) thin films using N2O gas. The effects of the process parameters on the etch rate were investigated and are discussed in this work in terms of plasma parameter measurement performed using a Langmuir probe and modeling calculations. Process parameters of interest include the ICP source power and bias power. Oxygen atoms O(3P) were shown to be the major etching agent of polymer. At the same time, we propose that while positive ions are not an effective etchant, they play an important role as an effective channel of energy transfer from the plasma to the polymer. In this article, we report results obtained from a study carried out on inductively-coupled plasma (ICP) etching of poly-monochloro-para-xylylene (parylene-C) thin films using N2O gas. The effects of the process parameters on the etch rate were investigated and are discussed in this work in terms of plasma parameter measurement performed using a Langmuir probe and modeling calculations. Process parameters of interest include the ICP source power and bias power. Oxygen atoms O(3P) were shown to be the major etching agent of polymer. At the same time, we propose that while positive ions are not an effective etchant, they play an important role as an effective channel of energy transfer from the plasma to the polymer.
D. A. Shutov,Seung-Youl Kang,Kyu-Ha Baek,Kyung Soo Suh,Nam-Ki Min,Kwang-Ho Kwon 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.5
Chemical and morphological changes of phenol formaldehyde-based photoresist after O2 radiofrequency (RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe (AFM) measurements were shown that surface roughness was increased with plasma exposure time.