RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • Converter Switching Based Generic Loss Evaluation in Semiconductor and Clamp Circuit of IGCT Based MMC Converter Cells for HVDC Applications

        Madhan Mohan,Evgeny Tsyplakov,Christian Winter,Harshavardhan Marabathina 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5

        IGCTs are increasingly becoming the device of choice for high power applications such as HVDC and FACTS with low losses and high reliability. Voltage Source Converters (VSC) with IGCT semiconductors are the choice in high demanding applications with high power and current ratings primarily due to low overall losses and high power handling capability. IGCT circuit typically require a di/dt limiting snubber for the protection of freewheeling diodes from huge current derivatives and so an over voltage limiting mechanism for the protection of IGCTs. This paper presents the performance evaluation of IGCT and its Clamp Circuit in terms of losses, focusing on MMC converter cells for use in high power applications such as HVDC, FACTS. The proposed method is based on look up tables generated for clamp circuit energy dissipation for the different converter switching states and is synchronized with the actual switching transitions. Additionally, the temperature dependency of the reverse recovery current for the freewheeling diode losses also considered. Hence, it yields an accurate, yet computationally efficient method of loss calculation. The results for IGCT based MMC converters are also compared with IGBT based MMC converter to clearly highlight the advantages of one over the other.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼