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Photoluminescence of GaS:Er3+ Single Crystals
Moon-SeogJin,Choong-IlLee,Nam-OhKim,김화택 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.3
GaS:Er3+ layered single crystals with a hexagonal structure were grown by using the chemical transport reaction method. The photoluminescence spectra of the single crystals were measured at 6 K. Photoluminescence emission peaks were observed in the wavelength region 470 500 nm and were identied as originating from donor-acceptor pair recombinations and phonon replicas. Sharp emission peaks were observed in the wavelength regions 540 570 nm and 650 680 nm and originated from Er3+ sited at the C3v symmetry point.
Optical Properties of BaGa₂S₄: Tm³+ and BaGa₂Se₄: Tm³+ Single Crystals
Sang-AnPark,Moon-SeogJin,Chang-SunYoon,Choong-IlLee,Mi-YangKim,Se-JongBaik,Wha-TekKim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.6
BaGa2S4: Tm3+ and BaGa2Se4: Tm3+ single crystals were grown by using a chemical transport reaction method. The optical energy gaps of the BaGa2S4: Tm3+ and the BaGa2Se4: Tm3+ single crystals were found to be 4.005 eV and 2.983 eV, respectively, at 11 K. The temperature dependence of the optical energy gap was well tted by the Varshni equation. Sharp emission peaks were observed in the photoluminescence spectra of the single crystals. They were assigned to radiation recombination between split Stark levels of Tm3+.