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Kwang-Ho Kim,Hyun-Jun Kim,Pyungwoo Jang,Chisup Jung,Kyu Seomoon,서문규 대한금속·재료학회 2011 ELECTRONIC MATERIALS LETTERS Vol.7 No.2
Low-temperature-deposited aluminium oxide (Al_2O_3) thin films were grown on p-type Si substrates by the remote plasma atomic layer deposition (RPALD) technique. The RPALD technique uses an alternative trimethylaluminum precursor and oxygen radicals to obtain good interface properties for metal-insulatorsemiconductor (MIS) inversion-layer solar cell applications. Si MIS capacitors with ultra-thin Al_2O_3 (film thickness ranges from 1 nm to 6 nm) gate dielectric and SiNx films were fabricated at 300°C and at room temperature (RT), respectively. Low-temperature-deposited Al_2O_3 and SiNx films were characterized by electrical properties such as capacitance-voltage (C-V), and current-voltage (I-V). The interface state density (Dit) of the MIS capacitors with SiNx films and without SiNx films was derived from the 1 MHz frequency C-V curves. By using ultra-thin RPALD Al_2O_3, RT-sputtered SiNx films and a simple fabrication-processing sequence, MIS solar cells were fabricated on 1 Ω·cm to 10 Ω·cm p-Si wafers. The fabricated MIS solar cell with passivated Al_2O_3 and SiNx films has 8.21% efficiency.
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