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Yafeng Li,En Li,Chengyong Yu,Chong Gao,Gaofeng Guo,Yong Gao 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.2
In this paper, the microwave characteristics of typical photosensitive material InP under diff erent light irradiation are studied. The measurement sensor is a refl ection-type hemispherical quasi-optical resonator with an operating frequency range from 20to 40 GHz, an operating mode of TEM 00q , and a quality factor of 18,000 or more. For the short-time irradiation experiment,the variation of InP microwave characteristics with the irradiation power of 20 mW, 60 mW, 100 mW, and 200 mW, is studiedby frequency-domain and time-domain scanning methods, respectively. The measurement results indicate that the microwavecharacteristics of InP change signifi cantly even under weak light irradiation. Taking 100 mW and 200 mW irradiation poweras examples, the long-time irradiation experiment performed on InP lasting 1.5 min is carried out. The measurement resultcurves clearly show the infl uence of the thermal and non-thermal eff ects on the InP microwave characteristics at the instantof the monochrome light source opening and closing and during irradiation. Furthermore, the temperature distribution ofInP during 200 mW irradiation is real-time imaged by a thermal infrared imager to verify the existence of thermal eff ectduring irradiation. The measurement results are in good agreement with the theoretical analysis.
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