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Optical and Structural Properties for CuInSe2 Epilayers Grown by Using Hot Wall Epitaxy
유상하,홍광준,이봉주,방진주,정태수,Changju Youn 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
Copper indium diselenide (CuInSe$_2$, CIS) layers were grown on GaAs(100) substrates by using the hot wall epitaxy (HWE) method. The optimum temperatures of the substrate and the source for the growth turned out to be 410 and 620 $^\circ$C, respectively. The CIS layers were epitaxially grown along the $<$112$>$ direction and kept the initial mole fraction during the layer growth. Based on the absorption measurement, the band-gap variation of CIS was well interpreted by Varshni's equation. However, the energy difference, 180 meV, of the band gap between liquid helium and room temperatures was a very large value, unlike that of the reported CIS. Also, from the low-temperature photoluminescence measurement, the acceptor impurities in the CIS layers were confirmed to be native defects of V$_{\rm Cu}$ and/or Se$_{int}$, which were deeply located at 73.8 meV above the edge of the valence band