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김문연,고은하,하경임,김지용,전창호 동국대학교 경주대학 1996 東國論集 Vol.15 No.-
검사방법의 평가로서 자동화기기에 대한 적절한 평가는 특히 수입에 전적으로 의존하는 국내여건을 생각할때 중요한 과제이다. ISP-1000은 대용량, 다항목의 선택적 생화학 자동 분석기로 국내에서는 거의 채택된 경험이 없는 기기로서 효율적인 선정을 하기위하여 4가지 화학검사에 대한 평가를 하였다. 시판되는 대조물질 Level Ⅰ,Ⅱ로 검사내 정밀도, 검사일간 정밀도, 직선성을 구하였으며 100명의 환자검체로는 Cobas Mira와의 상관성을 구하였다. 검사내 정밀도는 Level Ⅰ대조물질에서는 변이계수가 4.31-8.73%, Level Ⅱ 대조물질에서의 변이계수는 1.32-8.22%이었으며, 검사일간 정밀도는 Level Ⅰ 대조물질로 얻은 변이계수는 6.29-8.974%, Level Ⅱ 대조물질로 검사한 경우는 5.78-8.22%이었다. 직선성의 평가에서는 0.9917-0.9998의 우수한 직선성을 보여주었고(P<0.01), Cobas Mira에 대한 상관관계는 0.8427-0.9857의 범위에 있었다(P<0.01). 결론적으로 ISP-1000에 대한 4가지 화학검사의 평가에 있어서 검사중 정밀도, 검사일간 정밀도, 직선성은 우수하였으며, 상관관계는 만족할만하였으나 더 좋은 결과를 얻기위하여 parameter등에 대한 재검토가 필요한 것으로 생각되었다. It is an important task to evaluate autochemical analyzers as one of the labortory method evaluations, especially considering of the domestic environments almost depending on the import. By analyzing 4 chemical tests, we evaluated the high throughoutput, multichannel, selective and rarely adopted chemical autoanalyzer ISP-1000. We analyzed within run precision, between day precision, lineality with the commercial control materials, and correlation with 100 patients samples. In within run precision, CVs were ranged from 4.31~8.73% in Level I control material, l.32-8.22% in Level Ⅱ control material. In between day precision, CVs were ranged from 6.29-8.974% in Level I control material, 5.78-8.22% in Level Ⅱ control material. The lineality was excellent(r²>O,9917, p<O.Ol). The correlation coefficients between ISP-l000 and Cobas Mira were ranged from 0.8247∼0.9857%(P<O.0l). In conclusion, 4 chemical tests of ISP-l000 were acceptable in within run precision, between day precision and lineality, and correlation with Cobas Mira was good but adjusting the parameters would be necessary for the better results.
p-Type GaN Growth from a Single GaN Precursor via Molecular Beam Epitaxy and Dopant Activation
Cunxu Gao,Chang Gyoun Kim,Chang Soo Kim,김도진,우부성,김효진,Young Eon Ihm 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.I
A study of GaN and p-GaN growths with doping of Mg, Be and Mn was undertaken using a single GaN precursor source via molecular beam epitaxy. Measurements of the changes in surface morphology and film resistivity with growth temperature and doping were carried out. Mg or Be acceptors were shown to improve the surface roughness of the films through forming of acceptor-nitrogen-hydrogen complexes. Thermal annealing for acceptor activation was performed in vacuum, Ar, and N$_2$ by using rapid thermal annealing. The environment of the activation annealing process was shown to affect the activation kinetics and the activation behaviors. A nitrogen ambient delayed the activation of the acceptors, but higher temperature promoted the activation process. The behaviors of the acceptor-nitrogen-hydrogen complexes were systematically examined through experimental set-ups and comparison with the behaviors in GaN:Mn film.
IC 동작의 비주기적 소모 전류 변화 측정을 통한 전도성 EMI 분석 기법
김형석(Hyoung-Seok Kim),임지훈(Ji-Hoon Lim),위재경(Jae-Kyung Wee),송인채(In-Chae Song),정창원(Chang won Jung),김부균(Boo-Gyoun Kim) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
In this paper, it is suggested the structure to detect voltage changes in the operation of integrated circuit(IC) and proposed the compensation method using a numerical formula for the decrement by OP-Amp bandwidth in the detected voltage for ICEM modeling. Accuracy of ICEM model is demanded to decrease electromagnetic interference(EMI) in IC level. To avoid inaccurate ICEM model, we need to detect correct voltage without decline. To get the exact voltage, a measured voltage is compensated by the transfer function and inverse transfer function of the op-amp that goes through circuit in detected voltage. The compensation method is by using Matlab program. According to the simulation, the decrement of output signal is confirmed. And this inexact output is restored to its original output using the compensation method.
솔-젤법에 의해 제조된 실리콘 태양전지 전극형성용 나노 글래스
강성구(Seong Gu Kang),이창완(Chang Wan Lee),정윤장(Yoon Jang Chung),김창균(Chang-Gyoun Kim),김성탁(Seongtak Kim),김동환(Donghwan Kim),이영국(Young Kuk Lee) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.4
We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick SiNx anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of 40㎛ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of 60 Ω/sq, a specific contact resistance (pc) below 10 mΩ · cm² could be achieved at a peak firing temperature around 700 °C. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.