http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Effects of β-Glucan on the Release of Nitric Oxide by Macrophages Stimulated with Lipopolysaccharide
Choi, E.Y.,Lee, S.S.,Hyeon, J.Y.,Choe, S.H.,Keum, B.R.,Lim, J.M.,Park, D.C.,Choi, I.S.,Cho, K.K. Asian Australasian Association of Animal Productio 2016 Animal Bioscience Vol.29 No.11
This research analyzed the effect of ${\beta}$-glucan that is expected to alleviate the production of the inflammatory mediator in macrophagocytes, which are processed by the lipopolysaccharide (LPS) of Escherichia. The incubated layer was used for a nitric oxide (NO) analysis. The DNA-binding activation of the small unit of nuclear factor-${\kappa}B$ was measured using the enzyme-linked immunosorbent assay-based kit. In the RAW264.7 cells that were vitalized by Escherichia coli (E. coli) LPS, the ${\beta}$-glucan inhibited both the combatant and rendering phases of the inducible NO synthase (iNOS)-derived NO. ${\beta}$-Glucan increased the expression of the heme oxygenase-1 (HO-1) in the cells that were stimulated by E. coli LPS, and the HO-1 activation was inhibited by the tin protoporphyrin IX (SnPP). This shows that the NO production induced by LPS is related to the inhibition effect of ${\beta}$-glucan. The phosphorylation of c-Jun N-terminal kinases (JNK) and the p38 induced by the LPS were not influenced by the ${\beta}$-glucan, and the inhibitory ${\kappa}B-{\alpha}$ ($I{\kappa}B-{\alpha}$) decomposition was not influenced either. Instead, ${\beta}$-glucan remarkably inhibited the phosphorylation of the signal transducer and activator of transcription-1 (STAT1) that was induced by the E. coli LPS. Overall, the ${\beta}$-glucan inhibited the production of NO in macrophagocytes that was vitalized by the E. coli LPS through the HO-1 induction and the STAT1 pathways inhibition in this research. As the host immune response control by ${\beta}$-glucan weakens the progress of the inflammatory disease, ${\beta}$-glucan can be used as an effective immunomodulator.
Low-temperature poly-silicon thin-film transistor developed without ion doping
C.M. Keum,J.K. Kim,주승기,배병성,S.J. Moon 한국정보디스플레이학회 2014 Journal of information display Vol.15 No.3
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) were developed without ion doping for lowercost. Aluminum (Al), a group 3 element, was used for the source and drain regions instead of ion doping. The effect ofAl doping was verified through the Arrhenius plot to check the shift of the Fermi level. Al doping was applied for themetal-induced lateral crystallized polycrystalline silicon (Si) to achieve a p-channel LTPS TFT without ion doping. TheTFT developed via Al doping exhibited 35.5 cm2/Vs field effect mobility, a −3.7V threshold voltage (Vth), a 4.0 × 105on–off ratio, and a 0.7V/dec subthreshold slope.