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TEM characterisation of GdN thin films
W.R. McKenzie,P.R. Munroe,F. Budde,B.J. Ruck,S. Granville,H.J. Trodahl 한국물리학회 2006 Current Applied Physics Vol.6 No.3
The rare-earth metal nitrides have been predicted to possess a wide range of electronic structures, ranging from ferromagnetic to half-metallic to semiconducting, which makes these materials attractive for a range of applications. In this study, GdN thin lms were growndetailed microstructural characterisation of these lms was carried out using a variety of techniques such as transmission electron micros-copy (TEM), Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectrometry. TEM analysis indicated the lmsare nano-crystalline, with crystallite sizes being aected by the ionisation state of the nitrogen atmosphere used. Sources of the lms’internal stress were discussed with a signicant amount of oxygen absorption, identied by RBS, being a probable cause. Electron dif-the lm.