http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions.
Park, Jong Cheon,Kim, Kyeong-Won,Gila, Brent P,Lambers, Eric S,Norton, David P,Pearton, Stephen J,Ren, Fan,Kim, Jin Kon,Cho, Hyun American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.11
<P>The valence band discontinuity (δE(v)) of Y2O3/InGaZnO4 (IGZO) heterojunctions was measured by a core-level photoemission method. The Y2O3 exhibited a band gap of -6.27 eV from absorption measurements. A value of δE(v) = 0.44 0.21 eV was obtained by using the Ga 2p3/2, Zn 2p3/2 and in 3d5/2 energy levels as references. Given the experimental bandgap of 3.2 eV for the IGZO, this would indicate a conduction band offset δE(c) of - 2.63 eV in the Y2O3/IGZO heterostructures and a nested interface band alignment.</P>