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Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
박래만,신재헌,Bosul Kim,Kyung Hyun Kim,정우석 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.4
A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum dot film had a high optical transmittance of over 95% at 550 nm with a thickness of 50 nm. A large hysteresis curve was observed in a current-voltage measurement. When we increased the voltage sweep range, electrons were charged into the silicon quantum dots because of the electrical n-type channel in an oxide thin film transistor.