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RISS 인기검색어
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- 저자 : Bobby Antony (검색결과 6 건)
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Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode
A. Bobby,N. Shiwakoti,P.M. Sarun,S. Verma,K. Asokan,B.K. Antony 한국물리학회 2015 Current Applied Physics Vol.15 No.11
The in-situ capacitance and dielectric properties of 25 MeV C4þ ion irradiated Ni/n-GaAs Schottky barrier diode (SBD) were studied at 100 kHz in the fluence range 5 × 1010 - 5 × 1013 ions/cm2. The investigation shows reduction in capacitance and charge density with increase in ion fluence. Consequent changes were observed in other related parameters like conductance, dielectric constant, dielectric loss, loss tangent and electrical modulus. The results were interpreted in terms of generation of swift heavy ion induced acceptor trap states by electronic energy loss mechanism. Besides, the switch over characteristics of depletion to inversion regions in the CV plot reveals minority carrier recombination centers also. The dispersion and relaxation peaks observed in bias dependent dielectric plots were ascribed to the polarization and relaxation mechanism due to the interfacial trap states. The traps and recombination centers were found to alter the barrier characteristics of the fabricated SBD depending upon the ion fluence.
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Plasma-relevant electron scattering cross sections of propene
Singh, Suvam,Gupta, Dhanoj,Antony, Bobby IOP PUBLISHING 2018 PLASMA SOURCES SCIENCE AND TECHNOLOGY Vol.27 No.10
<P>Propene (C<SUB>3</SUB>H<SUB>6</SUB>) is considered to be an important molecule in the field of plasma science due to it being recognized as a by-product of plasma irradiation at the diverter regions and plasma facing walls in modern fusion devices. This article reports electron scattering elastic, momentum transfer, differential and excitation cross sections of propene. The rate coefficients for the elastic and momentum transfer cross sections are also reported. The data reported in this article are considered to be important in the field of plasma physics due to their direct influence on plasma modeling applications. Two theoretical methods were used for the present study; the R-matrix method for low energy and spherical complex optical potential formalism for high energy. The R-matrix calculation was performed using the correlation-consistent polarized valence-only triple-zeta basis set and a reasonable agreement with the target properties was obtained. The scattering calculations were then performed using these parameters to compute various cross sections. The present cross sections compare reasonably well with the only available data in the literature. More experimental studies of a similar nature are encouraged for the validation of the present results.</P>
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Harshad Bhutadia,Minaxi Vinodkumar,Bobby Antony 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.41
Calculations of the electron impact total ionization cross sections for N(CH_3)_3, NH(CH_3)_2,NH_2CH_3, P(CH_3)_3, PH(CH_3)_2, and PH_2CH_3 were performed in the energy range from ionization threshold to 2 keV. In this work we have made use of a spherical complex optical potential in the Schr¨odinger equation, which is solved through the partial wave approximation to obtain the total inelastic cross sections. The total inelastic cross sections thus obtained are then used to derive the total ionization cross sections by employing the complex spherical potential-ionization contribution method.
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Cross sections for electron collision with difluoroacetylene
Gupta, Dhanoj,Choi, Heechol,Kwon, Deuk-Chul,Yoon, Jung-Sik,Antony, Bobby,Song, Mi-Young Institute of Physics Publishing Ltd. 2017 Journal of Physics B: Atomic, Molecular and Optica Vol.50 No.8
<P>We report a detailed calculation of total elastic, differential elastic, momentum transfer and electronic excitation for electron impact on difluoroacetylene (C<SUB>2</SUB>F<SUB>2</SUB>) molecules using the R-matrix method at low energies. After testing many target models, the final results are reported for the target model that gave the best target properties and predicted the lowest value of the shape resonance. The shape resonance is detected at 5.86 eV and 6.49 eV with the close-coupling and static exchange models due to <SUP>2</SUP>Π<SUB>g</SUB> (<SUP>2</SUP>B<SUB>2g</SUB>, <SUP>2</SUP>B<SUB>3g</SUB>) states. We observed that the effect of polarization becomes prominent at low energies below 4 eV, decreasing the magnitude of the elastic cross section systematically as it increases for C<SUB>2</SUB>F<SUB>2</SUB>. We have also computed elastic cross sections for C<SUB>2</SUB>H<SUB>2</SUB>, C<SUB>2</SUB>F<SUB>4</SUB> and C<SUB>2</SUB>H<SUB>4</SUB> with a similar model and compared with the experimental data for these molecules along with C<SUB>2</SUB>F<SUB>2</SUB>. General agreement is found in terms of the shape and nature of the cross section. Such a comparison shows the reliability of the present method for obtaining the cross section for C<SUB>2</SUB>F<SUB>2</SUB>. The calculation of elastic scattering cross section is extended to higher energies up to 5 keV using the spherical complex optical potential method. The two methods are found to be consistent, merging at around 12 eV for the elastic scattering cross section. Finally we report the total ionization cross section using the binary encounter Bethe method for C<SUB>2</SUB>F<SUB>2</SUB>. The perfluorination effect in the shape and magnitude of the elastic, momentum transfer and ionization cross sections when compared with C<SUB>2</SUB>H<SUB>2</SUB> showed a similar trend to that in the C<SUB>2</SUB>H<SUB>4</SUB>–C<SUB>2</SUB>F<SUB>4</SUB> and C<SUB>6</SUB>H<SUB>6</SUB>–C<SUB>6</SUB>F<SUB>6</SUB> systems. The cross-section data reported in this article could be an important input for the development of a C<SUB>2</SUB>F<SUB>2</SUB> plasma model for selective etching of Si/SiO<SUB>2</SUB> in the semiconductor industry.</P>
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