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Ching-Sung Lee,Bo-I Chou,Wei-Chou Hsu,Ke-Hua Su 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6
This work reports a novel AlGaAs/InGaAsN/GaAs heterostructure field-eect transistor (HFET) by integrating a dilute In0:3Ga0:7AsN0:01 nitride-channel directly onto a GaAs substrate by using a molecular beam epitaxy (MBE) system. Introducing nitrogen doping into an In0:3Ga0:7As channel can effectively reduce the eective energy band gap, resulting in an improved electron confinement capability. The thermal threshold coeficient (∂Vth=∂T) is very low, -1.07 mV/K, with an improved high-temperature linearity (∂GV S=∂T) of only 0.33 mV/K. Besides, improved high-temperature device characteristics have been achieved at 450 (300) K, including a gate-voltage swing (GVS) of 1.15 (1.2) V, a two-terminal gate-drain breakdown voltage (BVGD) of -14.4 (-15.8) V and a turn-on voltage (Von) of 0.92 (1.147) V.