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Young, Chadwin D.,Heh, Dawei,Choi, Ri-No,Lee, Byoung-Hun,Bersuker, Gennadi The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.2
Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.
Chadwin D. Young,Dawei Heh,Rino Choi,Byoung Hun Lee,Gennadi Bersuker 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.2
Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-κ dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trapinduced threshold voltage shift (△Vt), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-κ gate dielectric devices.
Chadwin D. Young,Dawei Heh,최리노,Byoung Hun Lee,Gennadi Bersuker 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.2
Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-κ dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trapinduced threshold voltage shift (ΔVt), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-κ gate dielectric devices.
Hokyung Park,Rino Choi,Byoung Hun Lee,Seung-Chul Song,Man Chang,Young, C.D.,Bersuker, G.,Lee, J.C.,Hyunsang Hwang IEEE 2006 IEEE electron device letters Vol.27 No.8
<P>To understand the intrinsic effect of a hot-carrier injection on high-kappa dielectrics free from concurrent cold-carrier trapping, the authors have investigated a hot-carrier-induced damage with channel hot-carrier stresses and substrate hot-carrier stress. Compared to substrate hot-carrier stress, the channel hot-carrier stress shows a more significant cold-carrier-injection effect. By using a detrapping bias, they were able to decouple the effect of cold-carrier trapping from the permanent trap generation induced by the hot-carrier injection. As channel hot-carrier stress bias was reduced, a portion of cold-carrier trapping increased and a portion of interface trap generation decreased</P>
In-Shik Han,Won-Ho Choi,Hyuk-Min Kwon,Min-Ki Na,Ying-Ying Zhang,Yong-Goo Kim,Jin-Suk Wang,Chang Yong Kang,Bersuker, G.,Byoung Hun Lee,Yoon Ha Jeong,Hi-Deok Lee,Jammy, R. IEEE 2009 IEEE electron device letters Vol.30 No.3
<P>Time-dependent dielectric breakdown (TDDB) characteristics of La<SUB>2</SUB>O<SUB>3</SUB>-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO<SUB>2</SUB> , dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope beta of breakdown distribution is in the range of 0.87-1.19, and it is independent on capacitor areas and stress conditions. Moreover, field dependence of T<SUB>BD</SUB> and stress-induced leakage current strongly suggest that the E-model is more applicable to explain in TDDB of La-incorporated high-k dielectric in Hf-based high-k/metal gate stack structure.</P>