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RISS 인기검색어
- 검색키워드
- 저자 : Behzad Ebrahimi (검색결과 3 건)
- 무료
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A RESURF LDMOSFET with a Dummy Gate on Partial SOI
Behzad Ebrahimi,Behrouz Afzal,Ali Afzali-Kusha,Saeed Mohammadi 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.5
In this paper, we propose a laterally double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) that uses a dummy gate on top of the lightly-doped drain (LDD) region in a reduced surface field (RESURF) structure. The structure is based on the partial silicon-on-insulator (PSOI) structure to increase the operating frequency of the device. The use of the dummy gate induces another electric field peak in the structure, which increases the breakdown voltage of the transistor. It also improves the gate-drain feedback capacitance, the transconductance, and the ON-resistance of the device. For a LDD length of 3 µm, the breakdown voltage increases about 10%, the transconductance increases over 200%, and the ON-resistance decreases about 45%. When a LDD length of 10 µm is used, the increase in the breakdown voltage is 17%. In addition, we propose a breakdown voltage model for the structure, which may be used to optimize the design of the structure.
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Roya Ebrahimi,Afshin Maleki,Yahya Zandsalimi,Reza Ghanbari,Behzad Shahmoradi,Reza Rezaee,Mahdi Safari,주상우,Hiua Daraei,Shivaraju Harikaranahalli Puttaiah,Omid Giahi 한국공업화학회 2019 Journal of Industrial and Engineering Chemistry Vol.73 No.-
The present study aimed at evaluating the application of tungsten oxide-doped zinc oxide nanoparticlesfor the photocatalytic degradation of Direct Blue 15 dye in a sequencing batch reactor. ZnO nanoparticleswere doped with WO3 through hydrothermal synthesis method. To characterize the synthesizednanoparticles scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy,atomic force microscopy, zeta potential analysis, and ultraviolet–visible spectroscopy were used. Theradiation source in this study wasfive 6 W UV lamps. Operational parameters affecting the process,namely pH, light intensity, dopant percentage, dye concentration, and contact time, were evaluated. Theresults of the present study revealed that the efficiency of the photocatalytic process for the degradationof organic dyes was higher at acidic pH values than neutral or basic values. In addition, upon increasingthe light intensity from 172 to 505 W/m2, the efficacy of dye degradation was enhanced from 27.8 to73.5%. Increasing the concentration of the dopant percentage from 1 to 5% w/v increased the degradationefficacy from 30.69 to 73.1%. Increasing the initial dye concentration from 20 to 100 mg/L decreased thedegradation efficacy from 86.9 to 37.5%. Photocatalytic process using WO3-doped ZnO nanoparticlesfixedon a glass surface thus was proven to show a good efficiency for the degradation of organic dye in aquaticsolutions.
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Optimized QCA SRAM cell and array in nanoscale based on multiplexer with energy and cost analysis
Moein Kianpour,Reza Sabbaghi-Nadooshan,Majid Mohammadi,Behzad Ebrahimi Techno-Press 2023 Advances in nano research Vol.15 No.6
Quantum-dot cellular automata (QCA) has shown great potential in the nanoscale regime as a replacement for CMOS technology. This work presents a specific approach to static random-access memory (SRAM) cell based on 2:1 multiplexer, 4-bit SRAM array, and 32-bit SRAM array in QCA. By utilizing the proposed SRAM array, a single-layer 16×32-bit SRAM with the read/write capability is presented using an optimized signal distribution network (SDN) crossover technique. In the present study, an extremely-optimized 2:1 multiplexer is proposed, which is used to implement an extremely-optimized SRAM cell. The results of simulation show the superiority of the proposed 2:1 multiplexer and SRAM cell. This study also provides a more efficient and accurate method for calculating QCA costs. The proposed extremely-optimized SRAM cell and SRAM arrays are advantageous in terms of complexity, delay, area, and QCA cost parameters in comparison with previous designs in QCA, CMOS, and FinFET technologies. Moreover, compared to previous designs in QCA and FinFET technologies, the proposed structure saves total energy consisting of overall energy consumption, switching energy dissipation, and leakage energy dissipation. The energy and structural analyses of the proposed scheme are performed in QCAPro and QCADesigner 2.0.3 tools. According to the simulation results and comparison with previous high-quality studies based on QCA and FinFET design approaches, the proposed SRAM reduces the overall energy consumption by 25%, occupies 33% smaller area, and requires 15% fewer cells. Moreover, the QCA cost is reduced by 35% compared to outstanding designs in the literature.
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