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Vaccines between war and market
Balestra Anna,Caruso Raul 한국외국어대학교 국제지역연구센터 2023 International Area Studies Review Vol.26 No.1
This short paper presents a theoretical analysis that is intended to throw light on some issues related to the supply of vaccines in a context where producer countries are involved in armed conflicts. We present a simple model which combines elements of Hirshleifer-style economic analysis of conflict and microeconomic modelling of oligopolistic markets. In particular, we apply a simple Cournot duopoly model to two producer countries. Findings show that world supply of vaccines is indirectly and negatively affected by the existence of armed conflicts in a producer country that is involved in an armed conflict. Yet such negative impact on supply also increases the world price. In brief, participation of producer countries in armed conflicts turns out to be detrimental for global supply of vaccines.
Girardi, M.,Mercurio, A.,Balestra, I.,Nonino, M.,Biviano, A.,Grillo, C.,Rosati, P.,Annunziatella, M.,Demarco, R.,Fritz, A.,Gobat, R.,Lemze, D.,Presotto, V.,Scodeggio, M.,Tozzi, P.,Bartosch Caminha, G. EDP Sciences 2015 Astronomy and astrophysics Vol.579 No.-
<P>Aims. In the effort to understand the link between the structure of galaxy clusters and their galaxy populations, we focus on MACSJ1206.20847at z ~ 0.44 and probe its substructure in the projected phase space through the spectrophotometric properties of a large number of galaxies from the CLASHVLT survey. Methods. Our analysis is mainly based on an extensive spectroscopic dataset of 445 member galaxies, mostly acquired with VIMOS at VLT as part of our ESO Large Programme, sampling the cluster out to a radius ~2R<SUB>200</SUB> (4 h<SUB>70</SUB><SUP>−1</SUP>Mpc). We classify 412 galaxies as passive, with strong Hδ absorption (red and blue galaxies), and with emission lines from weak to very strong. A number of tests for substructure detection are applied to analyze the galaxy distribution in the velocity space, in 2D space, and in 3D projected phase-space. Results. Studied in its entirety, the cluster appears as a large-scale relaxed system with a few secondary, minor overdensities in 2D distribution. We detect no velocity gradients or evidence of deviations in local mean velocities. The main feature is the WNW-ESE elongation. The analysis of galaxy populations per spectral class highlights a more complex scenario. The passive galaxies and red strong Hδ galaxies trace the cluster center and the WNWESE elongated structure. The red strong Hδ galaxies also mark a secondary, dense peak ~2h<SUB>70</SUB><SUP>−1</SUP> Mpcat ESE. The emission line galaxies cluster in several loose structures, mostly outside R<SUB>200</SUB>. Two of these structures are also detected through our 3D analysis. The observational scenario agrees with MACS J1206.20847 having WNWESE as the direction of the main cluster accretion, traced by passive galaxies and red strong Hδ galaxies. The red strong Hδ galaxies, interpreted as poststarburst galaxies, date a likely important event 12 Gyr before the epoch of observation. The emission line galaxies trace a secondary, ongoing infall where groups are accreted along several directions.</P>
Metal evaporation dependent charge injection in organic transistors
Xu, Y.,Liu, C.,Sun, H.,Balestra, F.,Ghibaudo, G.,Scheideler, W.,Noh, Y.Y. Elsevier Science 2014 ORGANIC ELECTRONICS Vol.15 No.8
To illuminate a long-term remaining issue on how contact metallization (metal and speed) affects charge injection, we investigated top-contact pentacene transistors using two categories of metals deposited at various rates. Differing from previous studies such as those devoted to morphological influences by microscopy, in this work we concentrated on their electrical characteristics in particular combining the low-frequency noise which provided a direct quantity of trap density and its evolution with respect to contact metal and deposition rate. It turns out that the transistors with noble metal (Au) suffer from metal-diffusion related charge trapping in the pentacene bulk close to the Au/pentacene interface, and this diffusion-limited injection is greatly tuned from bulk to interface by speeding Au deposition which leads to a Schottky-like injection due to the severe thermal damage to the upper pentacene layer. Applying a conventional contacting metal (Cu), however, Ohmic contacts with much fewer traps are always observed regardless of metallization speed. This is attributed to an ultra-thin interlayer of Cu<SUB>x</SUB>O that guarantees stable Ohmic injection by introducing gap states and protecting the pentacene film so that those transistors appear to be free from Cu metallization. Our results quantitatively show the limiting factors of charge injection for different metals and at various evaporation rates.
Stepped Propane Adsorption in Pure-Silica ITW Zeolite
Min, Jung Gi,Luna-Triguero, Azahara,Byun, Youngchul,Balestra, Salvador R. G.,Vicent-Luna, Jose Manuel,Calero, Sofia,Hong, Suk Bong,Camblor, Miguel A. American Chemical Society 2018 Langmuir Vol.34 No.16
<P>Gas adsorption over zeolites is at the basis of important applications of this class of microporous crystalline solids, notably as separation media and catalysts, but it may also be complex and not straightforward to understand. Here we report that for temperature below 323 K propane adsorption on the small-pore pure-silica zeolite ITW exhibits a clear step (pseudosaturation). This is absent in the case of propene and the other small linear alkanes. An intermediate plateau, clearly observed in the 293 K isotherm, always occurs when one molecule of propane is loaded in every other cage, i.e., at half-saturation. The simulation results show a swelling of the ITW structure upon propane adsorption. The strong dependence of available pore volume on the adsorbate loading level implies that adsorption cannot occur on the void structure while saturation can only be reached on highly loaded structures. To account for this unprecedented adsorption phenomenon, we propose the term “guest-modulated effect”.</P> [FIG OMISSION]</BR>
Reliable Mobility Evaluation of Organic Field-Effect Transistors With Different Contact Metals
Huang, Fanming,Liu, Ao,Zhu, Huihui,Xu, Yong,Balestra, Francis,Ghibaudo, Gerard,Noh, Yong-Young,Chu, Junhao,Li, Wenwu IEEE 2019 IEEE electron device letters Vol.40 No.4
<P>The reliability of mobility evaluation of organic field-effect transistors (OFETs) is a serious issue because numerous overestimated and underestimated mobilities have been reported recently. A reliable approach to accurately evaluate the OFET mobility is therefore highly desirable. Here, in this letter, two commonly employed methods and the Y function method (YFM) were used to extract the mobilities of indacenodithiophene-co-benzothiadiazole (IDT-BT) OFETs with four different contact metals. The mobilities extracted by the commonly used methods varied greatly with the contact metal and channel length, whereas those extracted by the YFM were very stable and approached the intrinsic mobility of IDT-BT. Our results show that YFM is a precise approach that can be widely used to evaluate the OFET mobility.</P>
CLASH-VLT: Environment-driven evolution of galaxies in the<i>z</i>= 0.209 cluster Abell 209
Annunziatella, M.,Mercurio, A.,Biviano, A.,Girardi, M.,Nonino, M.,Balestra, I.,Rosati, P.,Bartosch Caminha, G.,Brescia, M.,Gobat, R.,Grillo, C.,Lombardi, M.,Sartoris, B.,De Lucia, G.,Demarco, R.,Frye, EDP Sciences 2016 Astronomy and astrophysics Vol.585 No.-
The Kormendy relation of galaxies in the Frontier Fields clusters: Abell S1063 and MACS J1149.5+2223
Tortorelli, Luca,Mercurio, Amata,Paolillo, Maurizio,Rosati, Piero,Gargiulo, Adriana,Gobat, Raphael,Balestra, Italo,Caminha, G B,Annunziatella, Marianna,Grillo, Claudio,Lombardi, Marco,Nonino, Mario,Re Oxford University Press 2018 Monthly notices of the Royal Astronomical Society Vol.477 No.1
Yong Xu,Chuan Liu,Amegadez, Paul Seyram K.,Gi-Seong Ryu,Huaixin Wei,Balestra, Francis,Ghibaudo, Gerard,Yong-Young Noh IEEE 2015 IEEE electron device letters Vol.36 No.10
<P>Low-frequency noise (LFN) in double-gate (DG) In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is studied to investigate the origin of performance improvement. We found that thinning down the IGZO film enhances such improvements. With 7-nm IGZO, the mobility is raised by a factor of 3.77, and the subthreshold slope is reduced to 0.17 V/decade from single-gate to DG mode. Device simulations show that bulk transport inside IGZO film emerges as the two gates field effects get coupled. The LFN results reveal a transport transition from surface to bulk and disclose the superior bulk transport that experiences slight phonon scattering with a small Hooge parameter alpha(H) = 4.44 x 10(-3), whereas the surface transport undergoes serious charge trapping with surface trap densities about 2 x 10(11) eV(-1)cm(-2).</P>