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Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review
Nagarajan Balaji,이준신,Shahzada Qamar Hussain,박철민,Jayapal Raja,R. Jeyakumar 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.5
To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.
Advances in High Efficiency Back Contact Back Junction Solar Cells
Nagarajan Balaji,Cheolmin Park,Jayapal Raja,Junsin Yi 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.2
In the past few decade’s researchers, scientists, engineers of photovoltaic (PV) industry are working towards low cost high efficiency Si solar cells. Over the last decade the interest in back contact solar cell has been acquiring as well as a gradual introduction to industrial applications is increasing. As an alternative to conventional solar cells with a front and rear contact, the back-contact cells has remained a research topic. The aim of this work is to present a comprehensive summary of results incurred in the back contact back junction solar cells such as interdigitated back-contact (IBC), emitter wrap-through (EWT) and metallization wrap-through (MWT) over the years.
Nagarajan Balaji,Huong Thi Thanh Nguyen,박철민,주민규,Jayapal Raja,Somenath Chatterjee,R. Jeyakumar,이준신 한국물리학회 2018 Current Applied Physics Vol.18 No.1
In c-Si solar cells, surface recombination velocity increases as the wafer thickness decreases due to an increase in surface to volume ratio. For high efficiency, in addition to low surface recombination velocity at the rear side, a high internal reflection from the rear surface is also required. The SiOxNy film with low absorbance can act as rear surface reflector. In this study, industrially feasible SiO2/SiOxNy stack for rear surface passivation and screen printed local aluminium back surface field were used in the cell structure. A 3 nm thick oxide layer has resulted in low fixed oxide charge density of 1.58 1011 cm2 without parasitic shunting. The oxide layer capped with SiOxNy layer led to surface recombination velocity of 155 cm/s after firing. Using single layer (SiO2) rear passivation, an efficiency of 18.13% has been obtained with Voc of 625 mV, Jsc of 36.4 mA/cm2 and fill factor of 78.7%. By using double layer (SiO2/SiOxNy stack) passivation at the rear side, an efficiency of 18.59% has been achieved with Voc of 632 mV, Jsc of 37.6 mA/ cm2, and fill factor of 78.3%. An improved cell performance was obtained with SiO2/SiOxNy rear stack passivation and local BSF.
Advances in High Efficiency Back Contact Back Junction Solar Cells
Balaji, Nagarajan,Park, Cheolmin,Raja, Jayapal,Yi, Junsin Korea Photovoltaic Society 2015 Current Photovoltaic Research Vol.3 No.2
In the past few decade's researchers, scientists, engineers of photovoltaic (PV) industry are working towards low cost high efficiency Si solar cells. Over the last decade the interest in back contact solar cell has been acquiring as well as a gradual introduction to industrial applications is increasing. As an alternative to conventional solar cells with a front and rear contact, the back-contact cells has remained a research topic. The aim of this work is to present a comprehensive summary of results incurred in the back contact back junction solar cells such as interdigitated back-contact (IBC), emitter wrap-through (EWT) and metallization wrap-through (MWT) over the years.
Nagarajan Balaji,Kyuwan Song,Jaewoo Choi,Cheolmin Park,Minkyu Ju,Hoong-Joo Lee,이준신 한국물리학회 2013 Current Applied Physics Vol.13 No.7
We report n-type passivated emitter rear totally diffused (PERT) silicon solar cells with local back contacts (LBC) formed by laser process. With passivated back surface field (BSF), the PERT cell design shows an improved open circuit voltage (Voc) with reduced recombination at the rear due to improved optical confinement. The rear side was diffused by POCl3 diffusion with low sheet resistance (Rs) BSF and passivated using SiNx. Laser ablation was used to open the SiNx on the rear for LBC. The Nd:YAG laser power (mW) parameters and POCl3 doping temperature were varied to obtain the BSF with lower sheet resistance. Laser power of 44 mW with 10 kHz resulted in 30 U/sq BSF layer with effective lifetime (seff)of 90 ms and a higher Voc of 646 mV. With the optimized laser parameters the best electrical results yielded a short circuit current density (Jsc) of 36 mA/cm2 and efficiency of 18.54%.
Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review
Balaji, Nagarajan,Hussain, Shahzada Qamar,Park, Cheolmin,Raja, Jayapal,Yi, Junsin,Jeyakumar, R. The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.5
To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.
Nagarajan Balaji,Kyuwan Song,Jaewoo Choi,Cheolmin Park,이준신 한국물리학회 2013 Current Applied Physics Vol.13 No.8
Local Back Contact (LBC) crystalline silicon solar cell with novel antimony (Sb) Local Back Surface Field (LBSF) are reported. The Sb LBSF is formed at low temperature with a Laser Fired Contacts (LFC) process. To improve the solar cell parameters of Sb LBSF, the rear passivation layer with SiNx is optimized by varying the refractive index. The Si-rich SiNx with a refractive index (n) of 2.7 possesses high lifetime of 2 ms with reduced absorption at a longer wavelength. The increase in lifetime is analyzed with SieH bond concentration by FTIR. A 100 nm thick Sb layer with low laser power of 44 mW resulted in a junction depth of 500 nm with a carrier concentration of 5 1020 cm3. The improved rear passivation with Si-rich SiNx, the optimized Sb thickness yielded the best electrical results, with open circuit voltage (Voc) of 643 mV and efficiency of 19.25%, compared to the reference cell with Voc of 625 mV and efficiency of 18.20%.
Reliability studies on RC beams exposed to fire based on IS456:2000 design methods
Aneesha Balaji,M.S. Aathira,T.M. Madhavan Pillai,Praveen Nagarajan 국제구조공학회 2016 Structural Engineering and Mechanics, An Int'l Jou Vol.59 No.5
This paper examines a methodology for computing the probability of structural failure of reinforced concrete beams subjected to fire. The significant load variables considered are dead load, sustained live load and fire temperature. Resistance is expressed in terms of moment capacity with random variables taken as yield strength of steel, concrete class (or grade of concrete), beam width and depth. The flexural capacity is determined based on the design equations recommended in Indian standard IS456:2000. Simplified method named 500oC isotherm method detailed in Eurocode 2 is incorporated for fire design. A transient thermal analysis is conducted using finite element software ANSYS(R) Release15. Reliability is evaluated from the initial state to 4h of fire exposure based on the first order reliability method (FORM). A procedure is coded in MATLAB for finding the reliability index. This procedure is validated with available literature. The effect of various parameters like effective cover, yield strength of steel, grade of concrete, distribution of reinforcement bars and aggregate type on reliability indices are studied. Parameters like effective cover of concrete, yield strength of steel has a significant effect on reliability of beams. Different failure modes like limit state of flexure and limit state of shear are checked.
Enhanced Haze Ratio on Glass by Novel Vapor Texturing Method
Lee, Seunghwan,Balaji, Nagarajan,Ju, Minkyu,Park, Cheolmin,Kim, Jungmo,Chung, Sungyoun,Lee, Youn-Jung,Yi, Junsin American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.5
<P>State-of-the-art optical trapping designs are required to enhance the light trapping capabilities of tandem thin film silicon solar cells. The wet etch process is used to texture the glass surface by dipping in diluted acidic solutions such as HNO3 (nitric acid) and HF (hydrofluoric acid). For vapor texturing, the vapor was generated by adding silicon to HF:HNO3 acidic solution. The anisotropic etching of vapor textured wafers resulted in an etching depth of about 2.78 mu m with reduced reflectance of 5%. We achieved a high haze value of 74.6% at a 540 nm wavelength by increasing the etching time and HF concentration.</P>