http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soonx2010,Won,Kang, Minji,You, Inx2010,Kyu,Kim, Dongx2010,Yu,Facchetti, Antonio,Noh, Yongx2010,Young WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.40
<P>On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injection and transport for n‐channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high‐k gate dielectric blend of P(VDF‐TrFE):PMMA. </P>
Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soonx2010,Won,Kang, Minji,You, Inx2010,Kyu,Kim, Dongx2010,Yu,Facchetti, Antonio,Noh, Yongx2010,Young WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.40
<P><B>A remarkable enhancement of p‐channel properties</B> is achieved in initially n‐channel dominant ambipolar P(NDI2OD‐T2) organic field‐effect transistors (OFETs) by the use of the fluorinated high‐k dielectric P(VDF‐TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high‐performance complementary‐like inverters and ring oscillator circuits.</P>
Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors
Baeg, Kang‐,Jun,Caironi, Mario,Noh, Yongx2010,Young WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.31
<P><B>Abstract</B></P><P>For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost‐effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point‐of‐care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass‐produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high‐mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector.</P><P>Solution‐processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (<I>μ</I>) achievable with polymeric, organic field‐effect transistors (OFETs). However, recently unprecedented values of <I>μ</I> ∼ 10 cm<SUP>2</SUP>/Vs have been achieved with solution‐processed polymer based OFETs, a value competing with mobilities reported in organic single‐crystals and exceeding the performances enabled by amorphous silicon (a‐Si). Interestingly these values were achieved thanks to the design and synthesis of donor‐acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band‐gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary “CMOS‐like” logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits.</P><P>Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large‐volume micro‐ and nano‐electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down‐scaling of devices in order to achieve the operation frequencies needed for applications, such as flexible radio‐frequency identification (RFID) tags, near‐field communication (NFC) devices, ambient electronics, and portable flexible displays.</P>
Kang, Minji,Baeg, Kang‐,Jun,Khim, Dongyoon,Noh, Yongx2010,Young,Kim, Dongx2010,Yu WILEY‐VCH Verlag 2013 Advanced Functional Materials Vol.23 No.28
<P><B>Abstract</B></P><P>The effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge‐trapping sites on the characteristics of organic nano‐floating‐gate memory (NFGM) devices are investigated. High‐performance NFGM devices are fabricated using the n‐type polymer semiconductor, poly{[<I>N</I>,<I>N</I>′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2)), and various metal NPs. These NPs are embedded within bilayers of various polymer dielectrics (polystyrene (PS)/poly(4‐vinyl phenol) (PVP) and PS/poly(methyl methacrylate) (PMMA)). The P(NDI2OD‐T2) organic field‐effect transistor (OFET)‐based NFGM devices exhibit high electron mobilities (0.4–0.5 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) and reliable non‐volatile memory characteristics, which include a wide memory window (≈52 V), a high on/off‐current ratio (<I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> ≈ 10<SUP>5</SUP>), and a long extrapolated retention time (>10<SUP>7</SUP> s), depending on the choice of the blocking dielectric (PVP or PMMA) and the metal (Au, Ag, Cu, or Al) NPs. The best memory characteristics are achieved in the ones fabricated using PMMA and Au or Ag NPs. The NFGM devices with PMMA and spatially well‐distributed Cu NPs show quasi‐permanent retention characteristics. An inkjet‐printed flexible P(NDI2OD‐T2) 256‐bit transistor memory array (16 × 16 transistors) with Au‐NPs on a polyethylene naphthalate substrate is also fabricated. These memory devices in array exhibit a high <I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> (≈10<SUP>4 ± 0.85</SUP>), wide memory window (≈43.5 V ± 8.3 V), and a high degree of reliability.</P>
Khim, Dongyoon,Han, Hyun,Baeg, Kang‐,Jun,Kim, Juhwan,Kwak, Sunx2010,Woo,Kim, Dongx2010,Yu,Noh, Yongx2010,Young WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.31
<P><B>Large‐area polymer FET arrays and integrated circuits (ICs)</B> are successfully demonstrated via a simple wire‐bar–coating process. Both a highly crystalline conjugated polymer layer and very smooth insulating polymer layer are formed by a consecutive wire‐bar–coating process on a 4‐inch plastic substrate with a short processing time for application as the active and dielectric layers of OFET arrays and ICs.</P>
Jeong, Hyungx2010,Gu,Lim, Bogyu,Na, Seokx2010,In,Baeg, Kang‐,Jun,Kim, Juhwan,Yun, Jinx2010,Mun,Kim, Dongx2010,Yu WILEY‐VCH Verlag 2011 Macromolecular Chemistry and Physics Vol.212 No.21
<P><B>Abstract</B></P><P>A series of conjugated polymers (PDTP, PDTPT, PDTPTT) based on dithieno[3,2‐<I>b</I>:2′,3′‐<I>d</I>]pyrrole (DTP) containing branched side‐chains is synthesized. The synthesized polymers show good solubility due to branched side‐chains in the organic solvent in the absence of heat treatment. To increase the oxidation potential, unsubstituted thiophene units are introduced into the polymer backbone. The introduction of unsubstituted thiophene units increases the oxidation potential, elevates degradation temperature, and enhances electronic properties. The PDTPTT FETs show the highest charge‐carrier mobility among the three polymers. These polymers are used as a donor material in bulk heterojunction solar cells, and the PDTPTT photovoltaic cells exhibit high performance.</P>
Lim, Bogyu,Baeg, Kang‐,Jun,Jeong, Hyungx2010,Gu,Jo, Jang,Kim, Hyungsoo,Park, Jeongx2010,Woo,Noh, Yongx2010,Young,Vak, Doojin,Park, Jeongx2010,Ho,Park, Jix2010,Woong,Kim, Dongx2010,Yu WILEY‐VCH Verlag 2009 Advanced Materials Vol.21 No.27
<P><B>A novel thiophene‐thienylenevinylene copolymer</B> is synthesized and evaluated for use in organic field‐effect transistors and organic solar cells. PETV12T shows good solution processability and high structural organization after annealing. Organic thin‐film transistors based on the polymer exhibit high mobility and a high resistance to oxidation. In addition, PETV12T shows potential as an electron donor in bulk heterojunction solar cells. </P>
Conservation of thiol‐oxidative stress responses regulated by SigR orthologues in actinomycetes
Kim, Minx2010,Sik,Dufour, Yann S.,Yoo, Ji Sun,Cho, Yoox2010,Bok,Park, Joox2010,Hong,Nam, Gix2010,Baeg,Kim, Hae Min,Lee, Kang‐,Lok,Donohue, Timothy J.,Roe, Jungx2010,Hye Blackwell Publishing Ltd 2012 Molecular microbiology Vol.85 No.2
<P><B>Summary</B></P><P>Numerous thiol‐reactive compounds cause oxidative stress where cells counteract by activation of survival strategies regulated by thiol‐based sensors. In <I>Streptomyces coelicolor</I>, a model actinomycete, a sigma/antisigma pair SigR/RsrA controls the response to thiol‐oxidative stress. To unravel its full physiological functions, chromatin immuno‐precipitation combined with sequence and transcript analyses were employed to identify 108 SigR target genes in <I>S. coelicolor</I> and to predict orthologous regulons across actinomycetes. In addition to reported genes for thiol homeostasis, protein degradation and ribosome modulation, 64 additional operons were identified suggesting new functions of this global regulator. We demonstrate that SigR maintains the level and activity of the housekeeping sigma factor HrdB during thiol‐oxidative stress, a novel strategy for stress responses. We also found that SigR defends cells against UV and thiol‐reactive damages, in which repair UvrA takes a part. Using a refined SigR‐binding sequence model, SigR orthologues and their targets were predicted in 42 actinomycetes. This revealed a conserved core set of SigR targets to function for thiol homeostasis, protein quality control, possible modulation of transcription and translation, flavin‐mediated redox reactions, and Fe‐S delivery. The composition of the SigR regulon reveals a robust conserved physiological mechanism to deal with thiol‐oxidative stress from bacteria to human.</P>