http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : B. J. Ruck (검색결과 3 건)
- 무료
- 기관 내 무료
- 유료
-
The use of the X-ray absorption near edge spectrum in materials characterisation
J. B. Metson,S. J. Hay,Y. Hu,H. J. Trodahl,B. Ruck 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
The increasing availability and use of synchrotron radiation has opened up new horizons in materials research. These sourcesoer very high brightness photon probes in an unparalleled wavelength range from the UV to the hard X-ray region. Although themedium to hard energy extended X-ray absorption ne structure (EXAFS) has been widely used in materials characterisation, thenear edge absorption spectrum (XANES), especially in the soft X-ray region below 2 kV, has been exploited to only a limited degree.This relates to both the diculties and limited availability of soft X-ray monochromators and the complexity of the spectra relativeto the EXAFS region. We have used XANES in studies of semiconductor oxide and nitride materials, the speciation of sulfur inindustrial smelting anodes and the development of oxide based electrode materials for Li ion batteries. Although of limitedquantitative applicability, the chemical detail available in these spectra is considerably superior to that in the X-ray photoelectron(XPS) spectrum and demonstrates the considerable power of the method.
-
Microstructural, Electrical and Magnetic Properties of Erbium Doped Zinc Oxide Single Crystals
P. P. Murmu,J. Kennedy,B. J. Ruck,S. Rubanov 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
We report the structural, electrical and magnetic properties of erbium (Er) implanted zinc oxide (ZnO) single crystals. Rutherford backscattering and channeling results showed that the majority of Er atoms resided in Zn substitutional lattice sites. Annealing led to a fraction of Er atoms moving into random interstitial sites. Transmission electron microscopy micrographs revealed that doped Er atoms were located in the nearsurface region, consistent with the results obtained from DYNAMICTRIM calculations. A non-linear Hall-voltage was observed near 100 K, which is associated with inhomogeneous transport in the material. The Er implanted and annealed ZnO exhibited persistent magnetic ordering to room temperature. Ferromagnetism was likely from the presence of intrinsic defects in ZnO, which mediates the magnetic ordering in Er implanted and annealed ZnO.
-
TEM characterisation of GdN thin films
W.R. McKenzie,P.R. Munroe,F. Budde,B.J. Ruck,S. Granville,H.J. Trodahl 한국물리학회 2006 Current Applied Physics Vol.6 No.3
The rare-earth metal nitrides have been predicted to possess a wide range of electronic structures, ranging from ferromagnetic to half-metallic to semiconducting, which makes these materials attractive for a range of applications. In this study, GdN thin lms were growndetailed microstructural characterisation of these lms was carried out using a variety of techniques such as transmission electron micros-copy (TEM), Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectrometry. TEM analysis indicated the lmsare nano-crystalline, with crystallite sizes being aected by the ionisation state of the nitrogen atmosphere used. Sources of the lms’internal stress were discussed with a signicant amount of oxygen absorption, identied by RBS, being a probable cause. Electron dif-the lm.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
