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M. Shimizu,Y. Ohsawa,H. Yoda,S. Shirotori,B. Altansargai,N. Shimomura,Y. Kato,S. Oikawa,H. Sugiyama,T. Inokuchi,K. Koi,M. Ishikawa,K. Ikegami,A. Kurobe Korean Magnetics Society 2018 Journal of Magnetics Vol.23 No.4
A voltage-control spintronics memory (VoCSM) which has a potential of low energy consumption uses the spin-Hall effect (SHE) and the voltage-controlled magnetic anisotropy (VCMA) effect for its write operation. In this work, the relationship between the critical switching current (Icsw) and the SHE electrode thickness (tN) is investigated in the range of 5 nm < tN < 8 nm. In the fabrication process, we develop highly-selective patterning process to stop MTJ etching precisely on the surface of the SHE electrode. Using the technique, Icsw is reduced by half as tN is varied from 8 nm to 5 nm, and Icsw of 112 mA at 20 ns write current pulse is obtained for MTJ size of 50 × 150 nm2 on Ta(2 nm)/TaB (3 nm) electrode. The results indicate that the decrease in the SHE electrode thickness is a promised method to reduce Icsw, which leads VoCSM to a low-energy-consumption device.
H. Yoda,Y. Ohsawa,Y. Kato,N. Shimomura,M. Shimizu,K. Koi,S. Shirotori,T. Inokuchi,H. Sugiyama,S. Oikawa,B. Altansargai,M. Ishikawa,A. Kurobe 한국자기학회 2019 Journal of Magnetics Vol.24 No.1
We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (Icsw) smaller than 50 μA at 20 nsec. for designed MTJ size of about 50 × 150 ㎚². The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of Icsw further reduction of Icsw is estimated to clarify that VoCSM has a potential to reduce Icsw down to several μA.