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Arpatzanis, N.,Hastas, N. A.,Dimitriadis, C. A.,Konstantinidis, G.,Charitidis, C.,Song, J. D.,Choi, W. J.,Lee, J. I. WILEY-VCH Verlag 2009 Physica Status Solidi. B Vol.246 No.4
<P>The effect of rapid thermal annealing temperature on the trap properties of Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In<SUB>0.2</SUB>Ga<SUB>0.8</SUB>As wells have been investigated by capacitance–voltage (C –V) and low frequency noise (LFN) measurements in both reverse and forward bias regimes. The current noise spectra show 1/f behaviour and generation–recombination (g–r) noise, attributed to uniformly distributed traps in energy and to a discrete trap level in the energy band-gap of the GaAs capping layer, respectively. The experimental results show that the annealing temperature is closely related with the level of these noise sources. The apparent doping concentrations, calculated from the C –V characteristics, indicate that the density of trapping states near the buffer layer interface is increased as the annealing temperature increases. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
Arpatzanis, N,Tassis, D H,Dimitriadis, C A,Charitidis, C,Song, J D,Choi, W J,Lee, J I Institute of Physics 2007 Semiconductor science and technology Vol.22 No.10
<P>Schottky contacts on n-type GaAs with embedded InAs quantum dots (QDs) were studied by current–voltage (<I>I</I>–<I>V</I>) and low-frequency noise measurements. For comparison, diodes not containing QDs were investigated as reference devices. A wide distribution of the ideality factor was observed, correlated with the level of the leakage current. Reverse <I>I</I>–<I>V</I> characteristics on the logarithmic scale indicate that the space-charge limited current dominates the carrier transport in these diodes. In all diodes, the reverse current noise spectra show 1/<I>f</I> behaviour, attributed to traps uniformly distributed in energy within the band-gap of the GaAs capping layer. Depth profiling measurements of the 1/<I>f</I> noise power spectral density demonstrate the impact of the QDs on these traps. In diodes containing QDs, in addition to the 1/<I>f</I> noise, a generation–recombination noise is found originating from a deep trap level localized in the vicinity of the QD plane.</P>
Arpatzanis, N.,Hastas, N. A.,Dimitriadis, C. A.,Charitidis, C.,Song, J. D.,Choi, W. J.,Lee, J. I. WILEY-VCH Verlag 2008 Physica status solidi. PSS. C, Current topics in s Vol.5 No.12
<P>The trap properties of Au/n-GaAs Schottky diodes with embedded InAs quantum dots (QDs) and different ideality factors were studied by capacitance-voltage (C-V) and low-frequency noise (LFN) measurements in the reverse bias regime. The reverse current noise spectra show 1/f behaviour and g-r noise, attributed to uniformly distributed traps in energy or to a discrete trap level in the energy band-gap of the GaAs capping layer, respectively. The Schottky contact performance or characteristics is closely related with the level of these noise sources. The C-V characteristics indicate the existence of traps with Gaussian energy distribution in the GaAs capping layer and in the InAs QDs layer. From analysis of the C-V characteristics, the density and the activation energy of these trap distributions are determined. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
Charitidis, C. A.,Golnas, A.,Chouliaras, F.,Arpatzanis, N.,Dimitriadis, C. A.,Lee, J. I.,Bakolias, C. WILEY-VCH Verlag 2008 Physica Status Solidi C Vol.5 No.12
<P>Quantum dots (QD) are a unique subset of nanomaterials characterized by their extraordinary quantum confinement behaviour. Even though the quantum dot industry is still in its infancy with revenues now reaching $10 million, it is expected to surpass $500 million in 2009. However, in order to leverage the full potential of the QD technology, new fabrication processes must be developed to attain high detectivity and high operating temperature (HOT) photodetector devices. The Quantum Dot Infrared Photodetectors (QDIPs) possess an immense potential for civilian and military applications due to the distinct characteristics stemming from their dimensionality – which provides 3D carrier confinement and the capacity for normal-incidence detection – and their amenability to bandgap engineering – which allows tailoring the peak and cutoff wavelengths according to custom needs. The QDIPs, especially when optimized to operate at higher temperatures, can become critical components in space exploration, defence and security, optical communication, quantum computing and cryptography, and medical imaging applications. Robust and reliable solutions for these fields will command a premium position in the marketplace as by responding to the societal need for secure electronic transactions, exponentially faster data processing, and higher quality diagnostic tools. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>