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Development of high-performance printed polymer field-effect transistors for flexible display
Paul S.K. Amegadze,노용영 한국정보디스플레이학회 2014 Journal of information display Vol.15 No.4
The utilization of organic conducting or semiconducting as well as printable inorganic materials as opposed to theconventional inorganic semiconductors such as silicon, among others, in the manufacture of electronics – the so-calledprinted electronics – revolutionized the electronic industry in the past decades as a result of their inherently unique physicalproperties and the new flare they brought to bear on the electronic fabrication process. This review paper provides a briefoverview of the recent progress of high-performance printed polymer field-effect transistors and integrated circuits for variousflexible electronic applications. It is organized into the following parts. The second section introduces π-conjugatedsemiconductors. It briefly introduces a variety of the best-performing π-conjugated semiconductors and their respectivecharge carrier mobilities in organic field-effect transistor devices. The third section presents an overview of printing techniquesdeveloped for graphical arts that can be used in the additive processing of polymer circuits. Finally, as the last partof the paper, a brief summary and perspective are presented.
Kim, Ran,Amegadze, Paul S. K.,Kang, Il,Yun, Hui‐,Jun,Noh, Yong‐,Young,Kwon, Soon‐,Ki,Kim, Yun‐,Hi WILEY‐VCH Verlag 2013 Advanced Functional Materials Vol.23 No.46
<P><B>Abstract</B></P><P>A high‐performance naphthalene diimide (NDI)‐based conjugated polymer for use as the active layer of n‐channel organic field‐effect transistors (OFETs) is reported. The solution‐processable n‐channel polymer is systematically designed and synthesized with an alternating structure of long alkyl substituted‐NDI and thienylene–vinylene–thienylene units (PNDI‐TVT). The material has a well‐controlled molecular structure with an extended π‐conjugated backbone, with no increase in the LUMO level, achieving a high mobility and highly ambient stable n‐type OFET. The top‐gate, bottom‐contact device shows remarkably high electron charge‐carrier mobility of up to 1.8 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> (<I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> = 10<SUP>6</SUP>) with the commonly used polymer dielectric, poly(methyl methacrylate) (PMMA). Moreover, PNDI‐TVT OFETs exhibit excellent air and operation stability. Such high device performance is attributed to improved π–π intermolecular interactions owing to the extended π‐conjugation, apart from the improved crystallinity and highly interdigitated lamellar structure caused by the extended π–π backbone and long alkyl groups.</P>