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      • Observation of Substrate Orientation-Dependent Oxygen Defect Filling in Thin WO<sub>3−δ</sub>/TiO<sub>2</sub> Pulsed Laser-Deposited Films with in Situ XPS at High Oxygen Pressure and Temperature

        Braun, Artur,Aksoy Akgul, Funda,Chen, Qianli,Erat, Selma,Huang, Tzu-Wen,Jabeen, Naila,Liu, Zhi,Mun, Bongjin S.,Mao, Samuel S.,Zhang, Xiaojun American Chemical Society 2012 Chemistry of materials Vol.24 No.17

        <P>Substoichiometric tungsten oxide films of approximately 10 nm thickness deposited with pulsed laser ablation on single-crystal TiO<SUB>2</SUB> substrates with (001) and (110) orientation show defect states near the Fermi energy in the valence-band X-ray photoelectron spectroscopy (XPS) spectra. The spectral weight of the defect states is particularly strong for the film grown on the (001) surface. In situ XPS under an oxygen pressure of 100 mTorr shows that the spectral weight of the defect states decreases significantly at 500 K for the film on the (110) substrate, whereas that of the film grown on the (001) substrate remains the same at a temperature up to 673 K. Furthermore, diffusion of titanium from the substrate to the film surface is observed on the (110) substrate, as is evidenced by the sudden appearance of the Ti 2p core level signature above 623 K and below 673 K. The film grown on the (001) surface does not show such an interdiffusion effect, which suggests that the orientation of the substrate can have a significant influence on the high-temperature integrity of the tungsten oxide films. Quantitative analysis of the O 1s core level XPS spectra shows that chemisorbed water from sample storage under ambient conditions is desorbed during heating under oxygen exposure.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2012/cmatex.2012.24.issue-17/cm301829y/production/images/medium/cm-2012-01829y_0011.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/cm301829y'>ACS Electronic Supporting Info</A></P>

      • Deactivation of Ru Catalysts under Catalytic CO Oxidation by Formation of Bulk Ru Oxide Probed with Ambient Pressure XPS

        Qadir, Kamran,Kim, Sun Mi,Seo, Hyungtak,Mun, Bongjin S.,Akgul, Funda Aksoy,Liu, Zhi,Park, Jeong Young American Chemical Society 2013 The Journal of Physical Chemistry Part C Vol.117 No.25

        <P>The surface science approach of using model catalysts in conjunction with the development of in situ spectroscopic tools, such as ambient pressure X-ray photoelectron spectroscopy (AP-XPS), offers a synergistic strategy for obtaining a substantially better understanding of deactivation phenomena. In this study, we investigated the nature of Ru oxides on a Ru polycrystalline film under oxidizing, reducing, and catalytic CO oxidation reaction conditions. Thus, bulk Ru oxide was easily formed on such Ru catalysts, the growth of which was dependent on reaction temperature. Once formed, such an oxide is irreversible and cannot be completely removed even under reducing conditions at elevated temperatures (200 °C). Our reaction studies showed substantial deactivation of the Ru film during catalytic CO oxidation, and its activity could be partially recovered after reduction pretreatment. Such continuous deactivation of a Ru film is correlated with irreversibly formed bulk Ru oxide, as shown by AP-XPS. Such in situ spectroscopic evidence of the transition of oxides to a catalytically inactive state can enable more effective design of catalysts with less deactivation.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2013/jpccck.2013.117.issue-25/jp402688a/production/images/medium/jp-2013-02688a_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp402688a'>ACS Electronic Supporting Info</A></P>

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